MMDT4403TB6

MMDT4403TB6 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = - 40V • Collector current I C = - 500mA • In compliance with EU RoHS 2002/95/EC directives 40 Volts POWER 200 mWatts SOT-563 MECHANICAL DATA • Case: SOT-563, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.003 gram • Marking: TZ 6 5 4 1 2 3 Fig.53 ABSOLUTE RATINGS Parameter Collector - E mitter Voltage Collector - B ase Voltage Emitter - B ase Voltage Collector Current - C ontinuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -500 Units V V V mA THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol PTOT RJA TJ TSTG Value 200 625 -55 to 150 -55 to 150 Units mW O C/W O C C O Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.1-JUN.29.2009 PAGE . 1 MMDT4403TB6 ELECTRICAL CHARACTERISTICS P a ra me te r C o lle c to r - E mi tte r B r e a k d o wn Vo lta g e C o lle c to r - B a s e B re a kd o wn Vo lta g e E mi tte r - B a s e B re a k d o wn V o lta g e B a s e C uto ff C urre nt C o lle c to r C uto ff C urre nt S ymb o l Te st C o nd i ti o n MIN. -4 0 -4 0 -5 .0 30 60 100 90 20 0 .7 5 200 TYP. MA X . -100 -100 300 - 0 .4 0 - 0 .7 5 - 0 .9 5 - 1 .3 0 6 .5 30 15 20 225 30 Uni ts V V V nA nA V ( B R) C E O IC =-1 .0 mA , IB =0 V ( B R) C B O IC =-1 0 0 uA , IE =0 V ( B R) E B O IE = -1 0 0 uA , IC = 0 IB L IC E X V C E =-3 5 V, V E B =-0 .4 V V C E =-3 5 V, V E B =-0 .4 V IC =-0 .1 mA , V C E =- 1 .0 V IC =-1 .0 mA , V C E =- 1 .0 V IC =-1 0 mA , V C E =- 1 .0 V IC =-1 5 0 mA , V C E =- 2 .0 V IC =-5 0 0 mA , V C E =- 2 .0 V IC =-1 5 0 mA , IB =- 1 5 mA IC =-5 0 0 mA , IB =- 5 0 mA IC =-1 5 0 mA , IB =- 1 5 mA IC =-5 0 0 mA , IB =- 5 0 mA V C B = -5 V, IE =0 , f =1 MHz V C B = -0 .5 V, I C = 0 , f= 1 MHz V C E =-1 0 V, IC =-2 0 mA , f=1 0 0 MHz V C C =-3 0 V,V B E =-2 .0 V, IC =-1 5 0 mA ,IB 1 =- 1 5 mA V C C =-3 0 V,V B E =-2 .0 V, IC =-1 5 0 mA ,IB 1 =- 1 5 mA V C C =-3 0 V,IC =-1 5 0 mA IB 1 =IB 2 =-1 5 mA V C C =-3 0 V,IC =-1 5 0 mA IB 1 =IB 2 =-1 5 mA D C C urr e nt Ga i n ( No te 2 ) hF E - C o lle c to r - E mi tte r S a tura ti o n Vo lta g e ( No te 2 ) B a s e - E mi tte r S atura ti o n Vo lta g e ( No te 2 ) C o lle c to r - B a s e C a p a ci ta nc e E mi tte r - B a s e C a p a c i ta nce C ur re nt Ga i n - B a nd wi d th P ro d uc t D e la y Ti me Ri s e Ti me S to ra g e Ti me F a ll Ti me V C E ( S AT) V B E (S AT) C CBO C EBO FT td tr ts tf V V pF pF MHz ns ns ns ns REV.0.1-JUN.29.2009 PAGE . 2 MMDT4403TB6 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 4K per 7" plastic Reel T/R - 10K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-JUN.29.2009 PAGE . 3