MMDT4413

MMDT4413 COMPLEMENTARY NPN/PNP SMALL SIGNAL SURGACE MOUNT TRANSISTOR VOLTAGE FEATURES • Complementary Pair • One 4401-Type NPN • One 4403-Type PNP • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Ultra-Small Surface Mount Package • Also Available in Lead Free Version • In compliance with EU RoHS 2002/95/EC directives 40 Volts POWER 225 mWatts MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.006 gram • Marking: M6A 6 5 4 1 2 3 Fig.55 MAXIMUM RATINGS,TOTAL DEVICE@TA=25oC UNLESS OTHERWISE SPECIFIED Characteristic Power Dissipation Thermal Resistance , Junction to Ambient Operating and Storage and Junction Range Symbol Pd RθJA TJ,TSTG Value 225 625 -55 to 150 Unit mW K/W O C STAD-MAR.27.2007 PAGE . 1 MMDT4413 MAXIMUM RATINGS,NPN 4401 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volage Collector Current-Continuous Symbol VCBO VCEO VEBO Ic NPN4401 60 40 6.0 600 Unit V V V mA MAXIMUM RATINGS,NPN 4403 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volage Collector Current-Continuous Symbol VCBO VCEO VEBO Ic PNP4403 -40 -40 -5.0 -600 Unit V V V mA STAD-MAR.27.2007 PAGE . 2 MMDT4413 ELECTRICAL CHARACTERISTICS,NPN 4401 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED C H A R A C T E R IS T IC O F F C H A R A C T E R IS T IC C o lle c to r - B a s e B re a k d o wn Vo lta g e C o lle c to r - E mi tte r B re a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e C o l l e c t o r C ut o f f C ur r e nt B a s e C ut o f f C ur r e nt O N C H A R A C T E R IS T IC S S YM B O L T E S T C O N D IT IO N M IN MA X U N IT V ( B R) C B O V ( B R) C E O V ( B R) E B O IC E X IB L IC = 1 0 0 µ A , IE = 0 IC = 1 . 0 m A , IB = 0 IE = 1 0 0 µ A , IC = 0 V C E =3 5 V, V E B (OF F )=0 .4 V V C E =3 5 V, V E B (OF F )=0 .4 V 60 40 6 .0 - 100 100 V V V nA nA D C C ur r e nt G a i n ( N o t e 2 ) hFE IC = 1 0 0 µ A , V C E = 1 . 0 V IC = 1 . 0 m A , V C E = 1 . 0 V IC = 1 0 m A , V C E = 1 . 0 V IC = 1 5 0 m A , V C E = 1 . 0 V IC = 5 0 0 m A , V C E = 2 . 0 V IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A 20 40 80 100 40 0 .7 5 - 300 0 .4 0 0 .7 5 0 .9 5 1 .2 0 - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e S M A L L S IG N A L C H A R A C T E R IS T IC S O ut p ut C a p a c i t a nc e In p u t C a p a c i t a n c e In p u t Im p e d a n c e Vo lta g e F e e d b a c k Ra ti o S m a l l S i g na l C ur r e nt G a i n O ut p ut A d m i t t a nc e C ur r e nt G a i n - B a nd w i d t h P r o d uc t S W IT C H IN G C H A R A C T E R IS T IC S D e l a y Ti m e R i s e Ti m e S t o r a g e Ti m e F a l l Ti m e V C E ( S AT) V B E ( S AT) V V Ccb Ceb hi e hr e V C B = 5 V , IE = 0 , f = 1 . 0 M H z V E B = 0 . 5 V , IC = 0 , f = 1 M H z 1 .0 0 .1 6 .5 30 15 8 .0 500 30 - pF pF kΩ X 1 0 -4 µS MHz V C E = 1 0 V , IC = 1 . 0 m A , f = 1 . 0 K H z hf e ho e fT V C E = 1 0 V , IC = 2 0 m A , f = 1 0 0 M H z 40 1 .0 250 td V C C =3 0 V,V B E (OF F )=2 .0 V, IC = 1 5 0 m A , IB 1 = 1 5 m A tr ts V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A tf - 15 20 225 30 ns ns ns ns STAD-MAR.27.2007 PAGE . 3 MMDT4413 ELECTRICAL CHARACTERISTICS,NPN 4403 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED C H A R A C T E R IS T IC O F F C H A R A C T E R IS T IC C o lle c to r - B a s e B re a k d o wn Vo lta g e C o lle c to r - E mi tte r B re a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e C o l l e c t o r C ut o f f C ur r e nt B a s e C ut o f f C ur r e nt O N C H A R A C T E R IS T IC S S YM B O L T E S T C O N D IT IO N M IN MA X U N IT V ( B R) C B O V ( B R) C E O V ( B R) E B O IC E X IB L IC = - 1 0 0 µ A , IE = 0 IC = - 1 . 0 m A , IB = 0 IE = - 1 0 0 µ A , IC = 0 V C E =-3 5 V, V E B (OF F )=-0 .4 V V C E =-3 5 V, V E B (OF F )=-0 .4 V -40 -40 -5 .0 - -100 -100 V V V nA nA D C C ur r e nt G a i n ( N o t e 2 ) hFE IC = - 1 0 0 µ A , V C E = - 1 . 0 V IC = - 1 . 0 m A , V C E = - 1 . 0 V IC = - 1 0 m A , V C E = - 1 . 0 V IC = - 1 5 0 m A , V C E = - 2 . 0 V IC = - 5 0 0 m A , V C E = - 2 . 0 V IC = - 1 5 0 m A , IB = - 1 5 m A IC = - 5 0 0 m A , IB = - 5 0 m A IC = - 1 5 0 m A , IB = - 1 5 m A IC = - 5 0 0 m A , IB = - 5 0 m A 30 60 100 100 20 -0 .7 5 - 300 -0 .4 0 -0 .7 5 -0 .9 5 -1 .3 0 - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e S M A L L S IG N A L C H A R A C T E R IS T IC S O ut p ut C a p a c i t a nc e In p u t C a p a c i t a n c e In p u t Im p e d a n c e Vo lta g e F e e d b a c k Ra ti o S m a l l S i g na l C ur r e nt G a i n O ut p ut A d m i t t a nc e C ur r e nt G a i n - B a nd w i d t h P r o d uc t S W IT C H IN G C H A R A C T E R IS T IC S D e l a y Ti m e R i s e Ti m e S t o r a g e Ti m e F a l l Ti m e V C E ( S AT) V B E ( S AT) V V Ccb Ceb hi e hr e V C B = - 1 0 V , IE = 0 , f = 1 . 0 M H z V E B = - 0 . 5 V , IC = 0 , f = 1 M H z 1 .5 0 .1 8 .5 30 15 8 .0 500 100 - pF pF kΩ X 1 0 -4 µS MHz V C E = - 1 0 V , IC = - 1 . 0 m A , f = 1 . 0 K H z hf e ho e fT V C E = - 1 0 V , IC = - 2 0 m A , f = 1 0 0 M H z 60 1 .0 200 td V C C =-3 0 V,V B E (OF F )=-2 .0 V, IC = - 1 5 0 m A , IB 1 = - 1 5 m A tr ts V C C = - 3 0 V , IC = - 1 5 0 m A IB 1 = IB 2 = - 1 5 m A tf - 15 20 225 30 ns ns ns ns STAD-MAR.27.2007 PAGE . 4 MMDT4413 2.0 30 VCE COLLECTOR-EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 IC = 1mA IC = 30mA IC = 10mA IC = 100mA IC = 300mA 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (4401) 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (4401) 1000 0.5 IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 10 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.1 TA = -50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current (4401) VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs Collector Current (4401) STAD-MAR.27.2007 PAGE . 5 MMDT4413 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 TA = 150°C fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V TA = -50°C TA = 25°C VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current (4401) 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Base Emitter Voltage vs. Collector Current (4401) 30 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 7 Typical Capacitance (4403) STAD-MAR.27.2007 PAGE . 6 MMDT4413 VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 8 Typical Collector Saturation Region (4403) 1000 VBE(ON), BASE EMITTER VOLTAGE (V) 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA = 150°C TA = -50°C TA = 25°C VCE = 5V 0.3 0.2 TA = 150°C 0.1 TA = 50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403) 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 10 Base-Emitter Voltage vs. Collector Current (4403) STAD-MAR.27.2007 PAGE . 7 MMDT4413 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 10 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 11 DC Current Gain vs. Collector Current (4403) 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Gain Bandwidth Product vs. Collector Current (4403) 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 13, Max Power Dissipation vs Ambient Temperature (4403) STAD-MAR.27.2007 PAGE . 8 MMDT4413 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.01.2006 PAGE . 9