MMSZ4706-V

MMSZ4687-V SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 43 Volts POWER 500 mWatts SOD-123 Unit: inch (mm) FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives .028(0.7) .019(0.5) .154(3.90) .141(3.60) .110(2.8) .098(2.5) MECHANICAL DATA • Case: SOD-123, Molded Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below • Approx. Weight: 0.01grams • Mounting Position: Any .008(.20)MAX .005(.12)MAX .016(.40)MIN MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Maximum Power Dissipation @TA=25OC (Notes A) Operating Junction and StorageTemperature Range Symbol Value 500 -50 to +150 PD TJ NOTES: A. Mounted on 5.0mm 2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. STAD-FEB.14.2007 .053(1.35) .037(0.95) .071(1.8) .055(1.4) Units mW O C PAGE . 1 MMSZ4687-V SERIES Nominal Zener Voltage Part Number No m. V Max. Zener Impedance Z ZT@ IZT M a x. V Ω mA Ω Max Reverse Leakage Current Z ZK @ IZK mA µA V Z @ IZT M i n. V I R @ VR V Marking C ode CP CT CU CV CA CX CY CZ DC DD DE DF DH DJ DK DM DN DP DT DU DV DA DZ DY EA EC ED EE EF EH EJ MMSZ4687-V MMSZ4688-V MMSZ4689-V MMSZ4690-V MMSZ4691-V MMSZ4692-V MMSZ4693-V MMSZ4694-V MMSZ4695-V MMSZ4696-V MMSZ4697-V MMSZ4698-V MMSZ4699-V MMSZ4700-V MMSZ4701-V MMSZ4702-V MMSZ4703-V MMSZ4704-V MMSZ4705-V MMSZ4706-V MMSZ4707-V MMSZ4708-V MMSZ4709-V MMSZ4710-V MMSZ4711-V MMSZ4712-V MMSZ4713-V MMSZ4714-V MMSZ4715-V MMSZ4716-V MMSZ4717-V 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.27 8.65 9.50 10.50 11.40 12.40 13.30 14.30 15.20 16.20 17.10 18.10 19.00 20.90 22.80 23.80 25.70 26.60 28.50 31.40 34.20 37.10 40.90 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.14 9.56 10.50 11.60 12.60 13.70 14.70 15.80 16.80 17.90 18.90 20.00 21.00 23.10 25.20 26.30 28.40 29.40 31.50 34.70 37.80 41.00 45.20 - 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 - - 4 10 10 10 10 10 10 1 1 1 1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 2 3 3 4 5 5.1 5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.8 10.6 11.4 12.1 12.9 13.6 14.4 15.2 16.7 18.2 19 20.4 21.2 22.8 25 27.3 29.6 32.6 STAD-FEB.14.2007 PAGE . 2 MMSZ4687-V SERIES Typical Characteristics Tamb = 25 °C unless otherwise specified 600 500 400 300 200 TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 15 10 5 IZ = 5 mA 0 100 0 0 40 80 120 160 200 -5 0 10 20 40 30 VZ - Z-Voltage (V) 50 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 4. Temperature Coefficient of Vz vs. Z-Voltage CD - Diode Capacitance (pF) 1000 VZ - Voltage Change (mV) 200 Tj = 25 °C 150 VR = 2 V Tj = 25 °C 100 100 IZ = 5 mA 10 50 1 0 5 10 15 20 VZ - Z-Voltage (V) 0 25 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 5. Diode Capacitance vs. Z-Voltage Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C VZtn - Relative Voltage Change 1.3 IF - Forward Current (mA) VZtn = VZt/VZ (25 °C) 100 10 Tj = 25 °C 1.2 1.1 1.0 0.9 0.8 - 60 TKVZ = 10 x 10-4/K 8 x 10 /K 6 x 10-4/K 4 x 10-4/K 2 x 10-4/K -4 1 0 - 2 x 10-4/K - 4 x 10-4/K 0.1 0.01 0.001 0 60 120 180 240 0 0.2 0.4 0.6 0.8 1.0 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage STAD-FEB.14.2007 PAGE . 3 MMSZ4687-V SERIES 80 IZ - Z-Current (mA) Ptot = 500 mW Tamb = 25 °C rZ - Differential Z-Resistance (Ω) 100 1000 IZ = 1 mA 100 5 mA 60 40 20 0 0 4 6 8 12 20 VZ - Z-Voltage (V) Figure 7. Z-Current vs. Z-Voltage 10 10 mA 1 Tj = 25 °C 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage 50 40 30 20 10 0 15 Ptot = 500 mW Tamb = 25 °C IZ - Z-Current (mA) 20 25 30 35 VZ - Z-Voltage (V) Figure 8. Z-Current vs. Z-Voltage Zthp - Thermal Resistance for Pulse Cond. (KW) 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse RthJA = 300 K/W T = Tjmax - Tamb 10 tP/T = 0.1 tP/T = 0.02 tP/T = 0.01 tP/T = 0.05 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 1 10-1 100 101 tP - Pulse Length (ms) 102 Figure 10. Thermal Response STAD-FEB.14.2007 PAGE . 4 MMSZ4687-V SERIES MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.01.2006 PAGE . 5