0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
PBHV8110DH_R1_00001

PBHV8110DH_R1_00001

  • 厂商:

    PANJIT(强茂)

  • 封装:

    TO-243AA

  • 描述:

    晶体管 - 双极 (BJT) - 单 NPN 100 V 1 A 100MHz 1.4 W 表面贴装型 SOT-89

  • 数据手册
  • 价格&库存
PBHV8110DH_R1_00001 数据手册
PPBHV8110DA NPN Low Vce(sat) Transistor Voltage 100V 1A Current SOT-23 Unit: inch(mm) Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in comply with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP complement: PBHV9110DA Mechanical Data  Case: SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.009 grams  Marking: 811 o Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNITS Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 1 A Collector Current (Pulse) ICP 3 A Power Dissipation PD 1.25 W Junction Temperature TJ 150 o TJ,TSTG -55~150 o RθJA 100 Operating Junction and Storage Temperature Range Thermal Resistance from Junction to Ambient (Note ) C C o C/W Note: Mounted on FR4 PCB at 1 inch square copper pad. August 16,2019-REV.00 Page 1 PPBHV8110DA o Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS OFF Characteristics Collector-Emitter Breakdown Voltage BVCEO IC= 10mA, IB= 0A 100 - - V Collector-Base Breakdown Voltage BVCBO IC= 0.1mA, IE= 0A 120 - - V Emitter-Base Breakdown Voltage BVEBO IE= 0.1mA, IC= 0A 6 - - V Collector Cutoff Current ICBO VCB= 120V, IE= 0A - - 500 nA Emitter Cutoff Current IEBO VEB= 6V, IC= 0A - - 500 nA VCE= 2V, IC= 150mA 140 - 330 VCE= 5V, IC= 500mA 100 VCE= 5V, IC= 1A 40 - - IC= 0.1A, IB= 10mA - 38 120 IC= 0.5A, IB= 50mA - 117 350 IC= 1A, IB= 0.1A - 220 450 IC= 0.1A, IB= 10mA - - 1.0 IC= 0.5A, IB= 50mA - - 1.1 100 - - MHz - - 10 pF ON characteristics DC Current Gain (Note1) Collector-Emitter Saturation Voltage (Note1) Base-Emitter Saturation voltage (Note1) Transition Frequency Collector Output Capacitance hFE VCE(SAT) VBE(SAT) fT COB VCE= 5V, IE= -50mA VCB= 10V, IE= 0A, f=1MHz 300 - mV V Note: 1. Pulse width
PBHV8110DH_R1_00001 价格&库存

很抱歉,暂时无法提供与“PBHV8110DH_R1_00001”相匹配的价格&库存,您可以联系我们找货

免费人工找货
PBHV8110DH_R1_00001
  •  国内价格 香港价格
  • 1+3.515151+0.43967
  • 10+2.1781210+0.27244
  • 100+1.36996100+0.17135
  • 500+1.02065500+0.12766

库存:8

PBHV8110DH_R1_00001
  •  国内价格 香港价格
  • 1000+0.829901000+0.10380
  • 2000+0.741602000+0.09276
  • 3000+0.696533000+0.08712
  • 5000+0.645875000+0.08079
  • 7000+0.615837000+0.07703
  • 10000+0.5866210000+0.07338
  • 25000+0.5224725000+0.06535
  • 50000+0.4828150000+0.06039
  • 100000+0.44948100000+0.05622

库存:8