PPBHV8110DW
NPN Low Vce(sat) Transistor
Voltage
100V
1A
Current
SOT-223
Unit: inch(mm)
Features
Silicon NPN epitaxial type
Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA
High collector current capability
Excellent DC current gain characteristics
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC61249 Standard
PNP complement: PBHV9110DW
Mechanical Data
Case: SOT-223 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.043 ounces, 0.123 grams
Marking: 8110DW
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
1
A
Collector Current (Pulse)
ICP
3
A
Power Dissipation
PD
2.6
W
150
o
TJ,TSTG
-55~150
o
RθJA
48
Junction Temperature
TJ
Operating Junction and Storage Temperature Range
Thermal Resistance from Junction to Ambient
(Note )
C
C
o
C/W
Note: Mounted on FR4 PCB at 1 inch square copper pad.
February 15,2019-REV.00
Page 1
PPBHV8110DW
o
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
OFF Characteristics
Collector-Emitter Breakdown Voltage
BVCEO
IC= 10mA, IB= 0A
100
-
-
V
Collector-Base Breakdown Voltage
BVCBO
IC= 0.1mA, IE= 0A
120
-
-
V
Emitter-Base Breakdown Voltage
BVEBO
IE= 0.1mA, IC= 0A
6
-
-
V
Collector Cutoff Current
ICBO
VCB= 120V, IE= 0A
-
-
500
nA
Emitter Cutoff Current
IEBO
VEB= 6V, IC= 0A
-
-
500
nA
VCE= 2V, IC= 150mA
140
-
330
VCE= 5V, IC= 500mA
100
-
300
VCE= 5V, IC= 1A
40
-
-
IC= 0.1A, IB= 10mA
-
38
120
IC= 0.5A, IB= 50mA
-
117
350
IC= 1A, IB= 0.1A
-
220
450
IC= 0.1A, IB= 10mA
-
-
1.0
IC= 0.5A, IB= 50mA
-
-
1.1
100
-
-
MHz
-
-
10
pF
ON characteristics
DC Current Gain
(Note1)
Collector-Emitter Saturation Voltage
(Note1)
Base-Emitter Saturation voltage
(Note1)
Transition Frequency
Collector Output Capacitance
hFE
VCE(SAT)
VBE(SAT)
fT
COB
VCE= 5V, IE= -50mA
VCB= 10V, IE= 0A,
f=1MHz
-
mV
V
Note: 1. Pulse width
