PBHV9110DW_R2_00001

PBHV9110DW_R2_00001

  • 厂商:

    PANJIT(强茂)

  • 封装:

    SOT-223

  • 描述:

    晶体管 - 双极 (BJT) - 单 PNP 100 V 1 A 100MHz 2.6 W 表面贴装型 SOT-223

  • 数据手册
  • 价格&库存
PBHV9110DW_R2_00001 数据手册
PPBHV9110DW PNP Low Vce(sat) Transistor Voltage -100V -1A Current SOT-223 Unit: inch(mm) Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: PBHV8110DW Mechanical Data  Case: SOT-223 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.043 ounces, 0.123 grams  Marking: 9110DW o Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNITS Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) IC -1 A Collector Current (Pulse) ICP -3 A Power Dissipation PD 2.6 W Junction Temperature TJ 150 o -55~150 o Operating Junction and Storage Temperature Range Thermal Resistance from Junction to Ambient (Note ) TJ,TSTG RθJA 48 C C o C/W Note: Mounted on FR4 PCB at 1 inch square copper pad. January 18,2019-REV.00 Page 1 PPBHV9110DW o Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS OFF Characteristics Collector-Emitter Breakdown Voltage BVCEO IC= -10mA, IB= 0A -100 - - V Collector-Base Breakdown Voltage BVCBO IC= -0.1mA, IE= 0A -120 - - V Emitter-Base Breakdown Voltage BVEBO IE= -0.1mA, IC= 0A -6 - - V Collector Cutoff Current ICBO VCB= -120V, IE= 0A - - -500 nA Emitter Cutoff Current IEBO VEB= -6V, IC= 0A - - -500 nA VCE= -2V, IC= -150mA 140 - 330 VCE= -5V, IC= -500mA 100 - 300 VCE= -5V, IC= -1A 40 - - IC= -0.1A, IB= -10mA - -90 -150 IC= -0.5A, IB= -50mA - -260 -350 IC= -1A, IB= -0.1A - -430 -600 IC= -0.1A, IB= -10mA - - -1.0 IC= -0.5A, IB= -50mA - - -1.1 VCE= -5V, IE= 50mA 100 - - MHz - - 10 pF ON characteristics DC Current Gain (Note1) Collector-Emitter Saturation Voltage (Note1) Base-Emitter Saturation voltage (Note1) Transition Frequency Collector Output Capacitance hFE VCE(SAT) VBE(SAT) fT COB VCB= -10V, IE= 0A, f=1MHz - mV V Note: 1. Pulse width
PBHV9110DW_R2_00001 价格&库存

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