PJ06N03D

PJ06N03D 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 06N03D Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJC RθJA Li mi t 25 +20 60 320 70 42 -5 5 to + 1 5 0 400 1 .8 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJ06N03D ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 1 5 V , ID = 1 5 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 3 0 A , V G S = 0 V 0 .9 5 65 1 .2 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ VDD=15V , RL=15Ω ID=1A , VGEN=10V RG=3.6Ω V D S = 1 5 V , ID = 1 5 A V GS = 1 0 V 72 8 .1 14.2 17.2 15 78 30 3750 650 500 nC 21 17 ns 90 42 pF 39 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=25V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 5 A 25 1 30 7 .6 4.7 3 9 .0 mΩ 6.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit V IN V DD RL V OUT Gate Charge Test Circuit V GS V DD RL RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJ06N03D Typical Characteristics Curves (TA=25OC,unless otherwise noted) ID - Drain-to-Source Current (A) 80 V GS =4.0V, 4.5V, 5.0V, 6.0V, 10.0V 80 60 ID - Drain Source Current (A) V DS=10V 60 3.5V 40 40 3.0V 20 T J=25 OC 20 2.5V 0 0 1 2 3 4 5 V DS - Drain-to-Source Voltage (V) T J=125 OC 1 1.5 2 2.5 T J=-55 OC 3 3.5 4 4.5 0 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic R DS(ON) - On-Resistance (m W ) 15 30 R DS(ON) - On-Resistance (m W ) I D=30A 12.5 10 7.5 5 2.5 0 0 10 20 30 40 50 60 70 80 90 ID - Drain Current (A) 25 20 15 10 5 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) V GS=4.5V V GS=10V T J=125 OC T J=25 OC FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance (Normalized) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 V GS=10V I D=30A C - Capacitance (pF) 5000 Ciss 4000 V GS=0V f=1MH Z 3000 2000 Coss 1000 Crss 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ - Junction Tem perature (oC) V DS - Drain-to-Source Voltage (V) FIG.5- On Resistance vs Junction Temperature FIG.6- Capacitance STAD-JUN.19.2006 PAGE . 3 PJ06N03D VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 20 40 60 80 Qg - Gate Charge (nC) Vgs Qg V DS =15V I D =15A Vgs(th) Qsw Qg(th) Qgs Qgd Qg Fig.7 - Gate Charge Waveform Fig.8 - Gate Charge Vth - G-S Threshold Voltage (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 BVDSS - Breakdown Voltage (V) I D =250uA 32 I D =250uA 31 30 29 28 -25 0 25 50 75 100 o 125 150 27 -50 -25 0 25 50 75 100 125 150 TJ - Junction Tem perature ( C) TJ - Junction Temperature (oC) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature 100 V GS =0V IS - Source Current (A) 10 1 T J =125 OC T J =25 OC T J =-55 OC 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4