PJ2301
20V P-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ
0.006(0.15)MIN.
• RDS(ON), VGS@-1.8V,ID@-1.5A=200mΩ
0.120(3.04)
• Advanced Trench Process Technology
0.110(2.80)
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC converters
• Low gate charge
• Lead free in compliance with EU RoHS 2011/65/EU directive
0.056(1.40)
0.047(1.20)
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.008(0.20)
0.079(2.00)
0.003(0.08)
0.070(1.80)
MECHANICAL DATA
• Case : SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
0.044(1.10)
0.004(0.10)
0.000(0.00)
• Approx. Weight: 0.0003 ounces, 0.0084 grams
0.035(0.90)
0.020(0.50)
• Marking : 01
0.013(0.35)
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R
S ym b o l
Li mit
Uni ts
D r a i n- S o ur c e Vo lta g e
V DS
-20
V
Ga te - S o ur c e Vo lta g e
V GS
+8
V
ID
-1 .7 5
- 1 .4
-2
A
ID M
10
A
PD
700
450
mW
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
R θJ A
175
O
C /W
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
R θJ L
65
O
C /W
T J ,T S TG
- 5 5 to + 1 5 0
C o nti nuo us D ra i n C urr e nt (No te s 1 )
S te a d y- S ta te
S te a d y- S ta te
t < 5s
TA = 2 5 OC
TA = 7 0 OC
TA = 2 5 OC
P uls e d D r a i n C urr e nt ( No te s 1 )
P o we r D i s s i p a ti o n ( No te s 2 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e Ra ng e
TA = 2 5 OC
TA = 7 0 OC
O
C
NOTES:
1. Mounted on minimum pad layout.
2
2. Mounted on 48cm FR-4 PCB board.
.
March 2,2015-REV.02
PAGE . 1
PJ2301
ELECTRICAL CHARACTERISTICS
P a ra m e te r
S ym b o l
Te s t C o nd i ti o n
M i n.
Typ .
M a x.
Uni ts
D ra i n- S o urc e B r e a k d o wn Vo lta g e
B V DSS
V GS = 0 V, I D = -2 5 0 μ A
-2 0
-
-
V
Ga te Thr e s ho ld Vo lta g e
V G S (t h)
V D S = V G S , ID = - 2 5 0 μ A
-0 .5
- 0 .7
- 0 .9
V
D ra i n- S o urc e On- S ta te Re s i s ta nc e
R D S ( o n)
VGS= -4.5V, I D= -2.2A
-
90
105
D ra i n- S o urc e On- S ta te Re s i s ta nc e
R D S ( o n)
VGS= -2.5V, I D= -1.7A
-
120
140
D ra i n- S o urc e On- S ta te Re s i s ta nc e
R D S ( o n)
VGS= -1.8V, I D= -1.5A
-
170
200
Ze ro Ga te Vo lta g e D ra i n C urr e nt
ID S S
VDS= -16V, VGS=0V
-
-
-1
μA
Gate Body Leakage
IGS S
V GS = + 8 V, V D S = 0 V
-
-
+1 0 0
nA
Forward Transconductance
g FS
V D S = -1 0 V, I D = -1 . 7 A
4
6
-
S
To ta l Ga te C ha rg e
Qg
-
4
-
Ga te - S o urc e C ha r g e
Qgs
-
0 .5
-
Ga te - D ra i n C ha r g e
Qgd
-
1
-
Tur n-On Ti me
ton
-
8
-
Tur n-Off Ti m e
t off
-
35
-
Tur n-On Ri s e Ti m e
tr
-
15
-
Tur n-Off F a ll Ti m e
tf
-
25
-
Inp ut C a p a c i ta nc e
C i ss
-
200
300
Outp ut C a p a c i ta nc e
C oss
-
90
140
Re ve rs e Tr a ns fe r C a p a c i ta nc e
C rss
-
40
60
S ta ti c
mΩ
Dynamic
Ga te Re s i s ta nc e
V D S = -1 0 V, I D = -2 . 2 A
V GS= -4.5V
V DD= -16V ,
ID= -2.2A, VGS= -4.5V
RGEN=2.5Ω
V D S = -1 0 V, V G S = 0 V
f= 1 .0 MH Z
nC
ns
pF
Rg
V D S = 0 V, V G S = 0 V
f= 1 .0 MH Z
-
12
-
Ω
Is
-
-
-
-2
A
V SD
I S = -1 A , V GS = 0 V
-
- 0 .7 9
-1
V
-
30
-
ns
-
12
-
nC
S o ur c e -D ra i n D i o d e
M a x. D i o d e F o rw a rd C ur re nt
D i o d e F o rwa r d Vo lta g e
B o d y-D i o d e Re ve rs e Re c o ve r y
Ti me
B o d y-D i o d e Re ve rs e Re c o ve r y
C ha rg e
March 2,2015-REV.02
t rr
I S = -2 .1 A , d i /d t= 1 0 0 A /μ s
Q rr
PAGE . 2
PJ2301
CHARACTERISTIC CURVES
7
300
C, CAPACITANCE (pF)
VDS = 0 V
VGS = 0 V
TJ = 25°C
-ID - Drain Current(A)
200
150
100
CRSS
COSS
50
0
10
5
−VGS
0
−VDS
5
10
15
20
-1.8V
4
-1.6V
3
2
-1.4V
1
-1.2V
0
1
Fig.1 Capacitance Variation
RDS(on), Drain-to-Source
Resistance (Ω)
-ID - Drain Current(A)
VDS>-10V
4
3
TJ=25℃
1
0
1
1.5
0.15
VGS = -2.5V
0.125
0.1
VGS = -4.5V
0.075
0.05
0.5
1.5
RDS(on), Drain-to-Source
Resistance (mΩ)
RDS(on), Drain-to-Source
Resistance (Ω)
0.3
0.2
0.1
0
4
5
6
3.5
Fig.4 On-Resistance vs. Drain Current and Gate Voltage
ID = -2.1A
TJ = 25°C
3
2.5
-ID, Drain Current (A)
0.5
2
5
TJ = 25°C
0.175
2
Fig.3 Transfer Characteristics
1
4
0.2
-VGS-Gate-to-Source Voltage (V)
0.4
3
Fig.2 On-Region Characteristics
5
0.5
2
-VDS-Drain-to-Source Voltage (V)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
TJ=25℃
-2.2V
5
0
2
-2.0V
-3.0V
-2.4V
6
250 CISS
7
130
ID=-2.1A
VGS=-4.5V
120
110
100
90
25
50
75
100
125
150
8
-VGS, Gate-to-Source Voltage (V)
TJ, JUNCTION TEMPERATURE (℃)
Fig.5 On-Resistance vs. Gate-Source Voltage
Fig.6 On-Resistance Variation with Temperature
March 2,2015-REV.02
PAGE . 3
PJ2301
QT
−VGS
−VDS
4
12
9
3
QGD
QGS
6
2
1
0
3
IDD = −2.1
−2.1 AA
= 25°C
TJJ =
25°C
0
1
2
3
4
0
QG, TOTAL GATE CHARGE (nC)
3
-IS,Source Current (A)
15
5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
CHARACTERISTIC CURVES
2
1
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-VSD, Source-to-Drain Voltage (V)
Fig.7 Gate-to-Source and Drain-to-Source vs. Total Charge
Fig.8 Diode Forward Voltage vs. Current
1000
10000
VDD = −16 V
ID = −2.1 A
VGS = −4.5 V
-IDSS, Leakage (nA)
t, TIME (ns)
VGS = 0V
TJ = 25°C
100
td(OFF)
tf
tr
10
td(ON)
TJ = 150°C
1000
TJ = 100°C
100
TJ = 75°C
10
2
1
1
10
6
8
10
12
14
16
18
20
-VDS, Drain-to-Source Voltage (V)
RG, GATE RESISTANCE (W)
Fig.10 Drain-to-Source Leakage Current vs. Voltage
Fig.9 Resistive Switching Time Variation vs. Gate Resistance
Normalized Effective Transient
Thermal Impedance
4
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RJL = 62.5_C/W
0.02
3. TJ – TA = PDMZJL(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
10
100
600
Fig.11 Thermal Response
March 2,2015-REV.02
September
29,2011-REV.01
PAGE . 4
PJ2301
0.035 MIN.
(0.90) MIN.
MOUNTING PAD LAYOUT
0.078
(2.00)
0.037
(0.95)
0.043
(1.10)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
March 2,2015-REV.02
PAGE . 5
PJ2301
Part No_packing code_Version
PJ2301_R1_00001
PJ2301_R2_00001
For example :
RB500V-40_R2_00001
Serial number
Part No.
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
March 2,2015-REV.02
Version Code XXXXX
1st Code
Packing size code
A
N/A
0
HF
0
serial number
R
7"
1
RoHS
1
serial number
B
13"
2
T
26mm
X
S
52mm
Y
L
F
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
2nd Code HF or RoHS 1st Code 2nd~5th Code
U
D
PAGE . 6
PJ2301
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of fitness for particular purpose, non-infringement and merchantability.
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Customers are responsible in comprehending the suitable use in particular applications.
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suitable for the specified use without further testing or modification.
•
The products shown herein are not designed and authorized for equipments requiring high
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March 2,2015-REV.02
PAGE . 7