PJ2306

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Load Switch, PWM Applications • ESD Protected • Component are in compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 06 D 3 Top View 1 G 2 S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D r a i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C ur re nt 1) S ym b o l V DS V GS ID ID M T A =2 5 O C T A =7 5 O C PD T J ,T S TG R θJ A L i mi t 30 +20 3 .2 16 1 .2 5 0 .7 5 -5 5 to + 1 5 0 100 Uni ts V V A A W O M a xi m um P o we r D i s s i p a ti o n Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e Junction-to Ambient Thermal Resistance(PCB mounted) 2 Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec C O C /W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE June 03, 2010-REV.00 PAGE . 1 PJ2306 ELECTRICALCHARACTERISTICS P a r a m e te r S ta t i c D r a i n- S o ur c e B r e a k d o wn Vo lt a g e G a t e Thr e s ho ld Vo lt a g e D r a i n- S o ur c e O n- S t a t e Re s i s t a nc e Ze r o G a t e Vo lt a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D i o d e F o r wa r d Vo lt a g e S ym b o l Te s t C o nd i ti o n Mi n. Typ . M a x. Uni t s B V DSS V GS ( t h) R D S ( o n) R D S ( o n) ID S S IGS S g fS V SD V GS = 0 V, ID = 2 5 0 uA V D S = V G S , ID = 2 5 0 uA VGS=4.5V, I D=2.8A VGS=10V, I D=3.2A VDS=24V, VGS=0V V G S = + 1 6 V, V D S = 0 V V D S = 4 . 5 V, ID = 2 . 8 A I S = 2 . 8 A , V GS = 0 V 30 1 72 55 2.5 85 V V mΩ 65 1 +10 3 0.88 1.2 uA uA S V Dynamic V D S =1 5 V, I D = 3 . 2 A , VGS=5V 2.8 5.0 3.5 6.5 nC To t a l G a t e C ha r g e Qg V D S = 1 5 V, ID = 3 . 2 A VGS=10V G a t e - S o ur c e C ha r g e G a t e - G r a i n C ha r g e Tur n- On D e la y Ti m e Ri s e Ti m e Tur n- Of f D e la y Ti m e F a ll Ti m e Inp ut C a p a c i ta nc e O utp ut C a p a c i t a nc e Re ve r s e Tr a ns f e r C a p a c i t a nc e Qgs Q gd t d ( o n) tr t d ( o ff ) tf C iss C oss C rss 0.5 1.1 8.6 11.2 16.8 ns 18.6 1.9 270 26 2.6 VDD=15V , RL=15Ω ID=1A , VGEN=10V RG=6Ω 12.8 V D S = 1 5 V, V GS = 0 V f= 1 . 0 M H Z 45 30 pF NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. Switching Test Circuit V IN V DD RL V OUT Gate Charge Test Circuit V GS V DD RL RG 1mA RG June 03, 2010-REV.00 PAGE . 2 PJ2306 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) 20 VGS=10V 16 4.0V 12 3.5V 8 4 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 3.0V 2.5V ID - Drain Source Current (A) 5.0V 20 VDS =10V 16 12 8 TJ = 125oC 25oC -55oC 4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric Fig.1 Fig.2 Transfer Characteristric 300 300 RDS(ON) - On Resistance(mΩ ) 250 200 150 100 50 VGS = 10V 0 VGS=4.5V RDS(ON) - On Resistance(mΩ ) ID =3.2A 250 200 150 100 50 TJ =25oC 0 TJ =125oC 0 5 10 15 ID - Drain Current (A) 20 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 1.8 C - Capacitance (pF) 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) VGS =10 V ID =3.2A 500 f = 1MHz VGS = 0V 400 300 200 100 0 Crss Coss C Ciss C C 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature June 03, 2010-REV.00 Fig.6 Capacitance PAGE. 3 PJ2306 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 1 2 3 4 5 Qg - Gate Charge (nC) 6 IS - Source Current (A) VDS=15V ID =3.2A 10 VGS = 0V 1 TJ = 125oC 25oC 0.1 -55oC 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. Fig.8 Source-Drain Diode Forward Voltage Vth - G-S Threshold Voltage(Normalized) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) ID = 250µA Fig.9 Breakdown Voltage vs Junction Temperature June 03, 2010-REV.00 PAGE. 4 PJ2306 MOUNTING PAD LAYOUT SOT-23 Unit: inch (mm) 0.035(0.9) 0.031(0.8) 0.037(0.95) ORDER INFORMATION • Packing information T/R - 3K per 7" plastic Reel LEGALSTATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. June 03, 2010-REV.00 0.078(2.0) PAGE . 5