PJ6694

PJ6694 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@12A=12mΩ • RDS(ON), VGS@4.5V,IDS@10A=22mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: SOIC-08 Package • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 6694 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJA Li mi t 25 +20 12 50 2 .5 1 .5 -5 5 to + 1 5 0 130 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=23A, VDD=25V, L=0.5mH Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJ6694 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 1 5 V , ID = 1 2 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 2 . 5 A , V G S = 0 V 0 .7 5 2 .5 1 .2 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ VDD=15V , RL=15Ω ID=1A , VGEN=10V RG=3.6Ω V D S = 1 5 V , ID = 1 2 A V GS = 1 0 V 2 6 .5 5 .2 5 .7 12 10 32 6 .5 1450 260 150 nC 14 12.5 ns 3 7 .5 8 pF 1 5 .0 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=10A VGS=10V, ID=12A VDS=25V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 2 A 25 1 25 1 7 .5 9.2 3 2 2 .0 mΩ 12.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit V IN V DD RL V OUT Gate Charge Test Circuit V GS V DD RL RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJ6694 Typical Characteristics Curves (TA=25 C,unless otherwise noted) O ID - Drain-to-Source Current (A) 60 50 40 30 20 10 0 0 1 50 ID - Drain Source Current (A) V GS =5.0V, 6.0V, 10.0V 4.5V V DS=10V 40 30 20 10 0 4.0V 3.5V 3.0V 2.5V T J=125 OC T J=25 OC 1.5 2 2.5 3 T J=-55 OC 2 3 4 5 3.5 4 4.5 5 5.5 VDS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 50 40 R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) ID =12A 40 30 20 10 0 30 20 V GS=4.5V V GS=10V T J=125 OC 10 T J=25 OC 2 4 6 8 10 0 0 10 20 30 40 50 60 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current 1.4 1.3 1.2 1.1 1 FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) C - Capacitance (pF) V GS=10V I D=12A 2000 1750 1500 1250 1000 750 500 250 0 0 Ciss V GS=0V f=1MH Z 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Coss Crss 5 10 15 20 25 T J - Junction Temperature (oC) VDS - Drain-to-Source Voltage (V) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 FIG.6- Capacitance PAGE . 3 PJ6694 VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 Vgs Qg V DS=15V I D=12A Vgs(th) Qg(th) Qgs Qsw 5 10 15 20 25 30 Qgd Qg Qg - Gate Charge (nC) Fig.7 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.8 - Gate Charge 33 32 31 30 29 28 27 -50 I D=250uA BVDSS - Breakdown Voltage (V) 1.2 1.1 1 I D=250uA 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 o 150 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature 100 I S - Source Current (A) V GS=0V 10 1 T J=125 C O T J=25 OC T J=-55 OC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage STAD-JUN.19.2006 PAGE . 4 PJ6694 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 5