PJB75N75

PJB75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: D2PAK / TO-263 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : B75N75 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS VGS ID ID M TA = 2 5 O C TA = 7 5 O C Li mi t 75 +20 75 350 105 6 2 .5 -5 5 to +1 5 0 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n PD TJ ,TS T G EAS RθJ C RθJ A O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e C Avalanche Energy with Single Pulse IAS=47A, VDD=37.5V, L=0.3mH 660 1 .2 62 O mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.11.2007 PAGE . 1 PJB75N75 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e BVD SS V G S (th) V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VG S =10V, ID =30A 75 1 20 8.0 - 3 11 V V G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) VG S =10V, ID =30A, Tc=125O C VD S =75V, VG S =0V VD S =75V, VG S =0V, Tc=125O C V G S =+2 0 V, V D S =0 V V D S > ID ( O N ) X R D S ( O N ) m a x , ID = 1 5 A mΩ 20 1 uA 10 +100 nΑ S Ze r o Ga te Vo lta g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance ID S S IG S S g fS Dynamic To t a l G a t e C h a r g e G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a nc e Qg Qg s Qg d td (o n) tr td (o ff) tf Ciss Coss C rs s V D S =2 5 V, V G S =0 V f=1 .0 MHZ VD D =30V , RL =15Ω ID =2A , VG E N =10V RG =2.5Ω V D S = 3 0 V , ID = 3 0 A V G S =10V - 83 8 .9 24.3 18.2 15.6 7 0 .5 1 3 .8 3150 300 240 22 20 ns 90 18 pF nC S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt Is VSD V DD RL V OUT IS = 3 0 A , V G S = 0 V - 0 .8 5 75 1 .5 V DD RL A V D i o d e F o rwa rd Vo lta g e Switching Test Circuit V IN Gate Charge Test Circuit V GS RG 1mA RG STAD-JUN.11.2007 PAGE . 2 PJB75N75 Typical Characteristics Curves (TA=25OC,unless otherwise noted) 100 ID - Drain-to-Source Current (A) 10V 6.0V 100 5.0V ID - Drain Source Current (A) V DS=10V VDS =10V 80 60 4.5V 80 60 40 20 0 1.5 2 2.5 3 3.5 4 4.5 V GS - Gate-to-Source Voltage (V) 4.0V 40 3.5V 20 0 0 1 2 3 4 5 V DS - Drain-to-Source Voltage (V) 3.0V TJ = 25oC T J = 125 C O T J=-55 OC Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 10 50 R DS(ON) - On-Resistance (m W ) 9.5 9 8.5 8 7.5 7 6.5 6 0 20 40 60 80 100 ID - Drain Current (A) R DS(ON) - On-Resistance (m W ) ID =30A 40 V GS=10V 30 20 T J=125 OC 10 T J=25 OC 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage 6000 RDS(ON) - On-Resistance (Normalized) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 C - Capacitance (pF) V GS=10V I D=30A 5000 4000 Ciss 3000 2000 1000 Crss 0 Coss V GS =0V f=1MHz -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ - Junction Tem perature (oC) VDS - Drain-to-Source Voltage (V) FIG.5- On Resistance vs Junction Temperature FIG.6 - Capacitance STAD-JUN.11.2007 PAGE . 3 PJB75N75 VGS - Gate-to-Source Voltage (V) 10 IS - Source Current (A) 8 V DS=30V I D=30A 100 V GS=0V 10 6 T J=125 OC 1 4 T J=25 OC T J=-55 OC 2 0 0 10 20 30 40 50 60 70 80 90 Qg - Gate Charge (nC) 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V SD - Source-to-Drain Voltage (V) Fig.7 - Gate Charge Fig.10 - Source-Drain Diode Forward Voltage Breakdown Voltage (NORMALIZED) 1.2 Vth - G-S Threshold Voltage (NORMALIZED) 1.2 I D=250uA I D=250uA 1.15 1.1 1.05 1 0.95 0.9 -50 1.1 1.0 0.9 0.8 0.7 -50 75 100 125 50 25 0 -25 TJ - Junction Tem perature ( oC) 150 BVDSS - -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.8 - Threshold Voltage vs Junction Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 100 90 80 ID - Drain Current (A) 1000 Rds(on) Limited 70 60 50 40 30 20 10 0 25 125 100 75 50 TJ - Junction Temperature (oC) 150 Limited by Package ID - Drain Current (A) 100 100us 10 DC 1ms 10ms 1 0.1 0.1 1000 100 10 1 V DS - Drain-to-Source Voltage (V) Fig.11 - Maximum Drain Current vs Junction Temperature Fig.12 - Safe Operation Area LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.11.2007 PAGE . 4