PPJC7409
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V
SOT-323
-500mA
Current
Unit: inch(mm)
Features
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Load switch, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-323 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.00018 ounces, 0.005 grams
Marking : C09
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
+10
V
ID
-500
mA
IDM
-1000
mA
350
mW
2.8
mW/ oC
Continuous Drain Current
Pulsed Drain Current
(Note 4)
o
Power Dissipation
Ta=25 C
o
Derate above 25 C
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
-55~150
RθJA
357
o
C
Typical Thermal resistance
-
Junction to Ambient (Note 3)
March 5,2015-REV.00
o
C/W
Page 1
PPJC7409
o
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-0.3
-0.59
-1.0
V
VGS=-4.5V, ID=-500mA
-
0.85
1.2
VGS=-2.5V, ID=-200mA
-
0.99
1.5
VGS=-1.8V, ID=-100mA
-
1.16
2.2
VGS=-1.5V, ID=-50mA
-
1.33
3.6
VGS=-1.2V, ID=-10mA
-
1.5
6.0
Drain-Source On-State Resistance
RDS(on)
Ω
Zero Gate Voltage Drain Current
IDSS
VDS=-16V, VGS=0V
-
-
-1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V, VDS=0V
-
+2
+10
uA
-
1.4
-
-
0.19
-
-
0.2
-
-
38
-
-
15
-
-
9
-
-
7.2
-
-
21
-
-
85
-
-
116
-
-
-
-500
mA
-
-0.93
-1.3
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=-10V, ID=-500mA,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-500mA,
VGS=-4.5V,
RG=6Ω
(Note 1,2)
nC
pF
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=-500mA, VGS=0V
NOTES :
1. Pulse width
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