PPJC7410
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
SOT-323
500mA
Unit: inch(mm)
Features
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00018 ounces, 0.005 grams
Marking: C10
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
+10
V
ID
500
mA
IDM
1000
mA
350
mW
2.8
mW/ oC
Continuous Drain Current
Pulsed Drain Current
(Note 4)
Power Dissipation
Ta=25oC
o
Derate above 25 C
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
-55~150
RθJA
357
o
C
Typical Thermal resistance
-
Junction to Ambient (Note 3)
March 5,2015-REV.00
o
C/W
Page 1
PPJC7410
o
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
0.3
0.65
0.9
V
VGS=4.5V, ID=500mA
-
280
400
VGS=2.5V, ID=200mA
-
350
650
VGS=1.8V, ID=100mA
-
400
800
VGS=1.5V, ID=50mA
-
500
1200
VGS=1.2V, ID=20mA
-
700
3000
Drain-Source On-State Resistance
RDS(on)
mΩ
Zero Gate Voltage Drain Current
IDSS
VDS=16V, VGS=0V
-
-
1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V, VDS=0V
-
+0.5
+10
uA
-
1.4
-
-
0.22
-
-
0.21
-
-
67
-
-
19
-
-
6
-
-
2.8
-
-
20
-
-
23
-
-
23
-
-
-
500
mA
-
0.87
1.3
V
Dynamic
(Note 5)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=10V, ID=500mA,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=150mA,
VGS=4.0V,
RG=10Ω
(Note 1,2)
nC
pF
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=500mA, VGS=0V
NOTES :
1. Pulse width
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