PJC7410_R1_00001

PPJC7410 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current SOT-323 500mA Unit: inch(mm) Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-323 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00018 ounces, 0.005 grams  Marking: C10 o Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS +10 V ID 500 mA IDM 1000 mA 350 mW 2.8 mW/ oC Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC o Derate above 25 C Operating Junction and Storage Temperature Range PD TJ,TSTG -55~150 RθJA 357 o C Typical Thermal resistance - Junction to Ambient (Note 3) March 5,2015-REV.00 o C/W Page 1 PPJC7410 o Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 0.3 0.65 0.9 V VGS=4.5V, ID=500mA - 280 400 VGS=2.5V, ID=200mA - 350 650 VGS=1.8V, ID=100mA - 400 800 VGS=1.5V, ID=50mA - 500 1200 VGS=1.2V, ID=20mA - 700 3000 Drain-Source On-State Resistance RDS(on) mΩ Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=+8V, VDS=0V - +0.5 +10 uA - 1.4 - - 0.22 - - 0.21 - - 67 - - 19 - - 6 - - 2.8 - - 20 - - 23 - - 23 - - - 500 mA - 0.87 1.3 V Dynamic (Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=10V, ID=500mA, VGS=4.5V (Note 1,2) VDS=10V, VGS=0V, f=1.0MHZ VDD=10V, ID=150mA, VGS=4.0V, RG=10Ω (Note 1,2) nC pF ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=500mA, VGS=0V NOTES : 1. Pulse width