PJC7428_R1_00001

PPJC7428 30V N-Channel Enhancement Mode MOSFET Voltage 30 V 300mA Current SOT-323 Unit: inch(mm) Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 standard Mechanical Data  Case : SOT-323 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.00018 ounces, 0.005 grams o Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS +10 ID 300 IDM 600 Continuous Drain Current Pulsed Drain Current (Note 4) (Note 1) o TA=25 C Power Dissipation o Derate above 25 C Operating Junction and Storage Temperature Range PD UNITS V mA 350 mW 2.8 mW/ C TJ,TSTG -55~150 RθJA 357 o o C Typical Thermal Resistance - Junction to Ambient October 20,2017-REV.01 (Note 3,4) o C/W Page 1 PPJC7428 o Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 0.4 0.75 1 VGS=4.5V, ID=300mA - 0.7 1.2 VGS=2.5V, ID=200mA - 0.8 1.6 VGS=1.8V, ID=100mA - 0.9 2 VGS=1.5V, ID=50mA - 1.1 3 VGS=1.2V, ID=20mA - 1.5 4 Drain-Source On-State Resistance RDS(on) V Ω Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 Gate-Source Leakage Current IGSS VGS=+8V, VDS=0V - - +10 - 0.9 - - 0.3 - - 0.2 - - 45 - - 14 - - 0.8 - - 8.3 - - 5.7 - - 35 - - 12 - - - 300 mA - 0.9 1.3 V Dynamic uA (Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=10V, ID=300mA, VGS=4.5V VDS=10V, VGS=0V, f=1MHZ VDD=10V, ID=300mA, VGS=4V, RG=10Ω (Note 1,2) nC pF ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=300mA, VGS=0V NOTES : 1. Pulse width