PJD09N03

PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-202,Method 208 • Marking : 09N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C PD TJ , TS T G EAS RθJ C RθJ A Li mi t 25 +20 50 240 45 26 -5 5 to + 1 5 0 130 2 .8 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=23A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-MAY.29.2006 PAGE . 1 PJD09N03 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance Dynamic V D S = 1 5 V , ID = 1 5 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is VSD IS = 3 0 A , V G S = 0 V 0 .9 4 30 1 .2 A V Qg s Qg d Td ( o n ) trr td (o ff) tf Ciss Coss C rs s V D S =1 5 V, V G S =0 V f=1 .0 MHZ VD D =15V , RL =15Ω ID =1A , VG E N =10V RG =3.6Ω V D S = 1 5 V , ID = 1 5 A V G S =10V 2 7 .5 3 .5 7 .2 10.0 11.0 35 11 . 2 1250 240 185 nC 13.0 14.0 ns 45 1 5 .5 pF 1 6 .0 BVD SS V G S (th) RD S (o n) RD S (o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VG S =4.5V, ID =30A VG S =10V, ID =30A VD S =25V, VG S =0V V G S =+2 0 V, V D S =0 V V D S = 1 0 V , ID = 1 5 A 25 1 25 9 .5 6.5 3 1 2 .0 mΩ 9.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit V IN V DD RL V OUT Gate Charge Test Circuit V GS V DD RL RG 1mA RG STAD-MAY.29.2006 PAGE . 2 PJD09N03 Typical Characteristics Curves (TA=25OC,unless otherwise noted) ID - Drain-to-Source Current (A) 80 80 ID - Drain Source Current (A) V GS=10V, 6.0V, 5.0V, 4.5V, 4.0V 60 V DS=10V 3.5V 60 40 40 T J=125 C O 3.0V 20 20 2.5V 0 T J=25 C O T J=-55 C O 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 VDS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 20 50 R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) I D=30A 15 40 10 V GS=4.5V 30 20 125oC T J=125 C O 5 V GS=10V 10 TJ =25 C T J=25oC O 0 0 0 20 40 60 80 2 4 6 8 10 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 1.6 1.4 1.2 V GS=10V I D=30A 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature STAD-MAY.29.2006 PAGE . 3 PJD09N03 10 Vgs Qg V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 V DS=15V I D=15A Vgs(th) Qg(th) Qgs Qsw 0 5 10 15 20 25 30 Qgd Qg Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D=250uA 29 I D=250uA 28 27 26 -25 0 25 50 75 100 125 150 25 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) TJ - Junction Temperature (o C) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 100 V GS =0V IS - Source Current (A) 10 T J=125 OC 1 T J=25 OC T J=-55 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-MAY.29.2006 PAGE . 4