PJD12P03L

PJD12P03L 30V P-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@ -10V,IDS@ -8.0A=28mΩ • RDS(ON), VGS@ -4.5V,IDS@ -5.0A=36mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 12P03L Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJC RθJA Li mi t -30 +20 -12 -55 38 22 -5 5 to + 1 5 0 130 3 .3 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy wi th Si ngle Pulse ID =23A, VD D =25V, L=0.5mH Juncti on-to-C ase Thermal Resi stance Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJD12P03L ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = - 1 5 V , ID = - 8 . 0 A , V G S = - 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = - 8 . 0 A , V G S = 0 V -0 .8 1 -30 -1 .2 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = - 1 5 V , V GS = 0 V f=1 .0 MHZ VDD=-15V , RL=15Ω ID=-1A , VGEN=-10V RG=3.6Ω V D S = - 1 5 V , ID = - 8 . 0 A V GS = - 1 0 V 2 6 .8 3 .8 4 .8 11.5 6.2 6 8 .7 2 5 .6 1550 300 155 nC 15 8.5 ns 80 32 pF 1 4 .2 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = - 2 5 0 u A V D S = V G S , ID = - 2 5 0 u A VGS=-4.5V, ID=-5.0A VGS=-10V, ID=-8.0A VDS=-30V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = - 1 0 V , ID = - 1 5 A -30 -1 15 28 21 -3 36 mΩ 28 -1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit V IN RL V OUT RG Gate Charge Test Circuit - V GS V DD RL 1mA RG STAD-JUN.19.2006 PAGE . 2 PJD12P03L Typical Characteristics Curves (TA=25OC,unless otherwise noted) 60 -ID - Drain-to-Source Current (A) 50 40 30 20 -ID - Drain Source Current (A) -10V 50 -6.0V -5.0V -4.5V -4.0V -3.5V -3.0V V DS=-10V 40 30 T J=25 OC 20 T J=125 OC 10 0 10 0 0 1 2 3 -2.5V 4 5 T J=-55 OC 1.5 2 2.5 3 3.5 4 4.5 5 VDS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 100 100 R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) ID =-8.0A 80 80 60 40 20 0 60 V GS=-4.5V T J=125 OC 40 V GS=-10V 0 10 20 30 40 50 60 20 0 2 4 6 T J=25 OC 8 10 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 V GS=-10V I D=-8.0A -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature (oC) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 PAGE . 3 PJD12P03L -VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 5 10 15 20 25 30 -Vgs Vgs Qg V DS =-15V I D =-8.0A Vgs(th) Qsw Qg(th) Qgs Qgd Qg Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform -Vth - G-S Threshold Voltage (NORMALIZED) Fig.7 - Gate Charge -BVDSS - Breakdown Voltage (V) 39 38 37 36 35 34 -50 1.2 1.1 1.0 I D =-250uA I D =-250uA 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o 125 150 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 100 V GS =0V -IS - Source Current (A) 10 T J=125 OC 1 T J =25 OC 0.1 T J =-55 OC 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4