PJE8406_R1_00001

PJE8406 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 800 mA SOT-523 Unit : inch(mm) Features  RDS(ON), VGS@4.5V,IDS@500mA=0.4Ω  RDS(ON), VGS@2.5V,IDS@300mA=0.7Ω  RDS(ON), VGS@1.8V,IDS@100mA=1.2Ω(typ)  Advanced Trench Process Technology  Specially Designed for Load Switch or PWM application.  ESD Protected  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-523 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.002 grams  Marking : E06 Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS +12 V Continuous Drain Current ID 800 mA Pulsed Drain Current IDM 3000 mA 350 mW 2.8 mW/ oC TJ,TSTG -55~150 oC RθJA 357 oC/W TA=25oC Power Dissipation Derate above 25oC Operating Junction and Storage Temperature Range PD Typical Thermal Resistance - Junction to Ambient(Note 3) August 10,2022 PJE8406-REV.04 Page 1 PJE8406 Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 20 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.4 0.63 1.0 V VGS=4.5V,ID=500mA - 0.35 0.4 VGS=2.5V,ID=300mA - 0.6 0.7 VGS=1.8V,ID=100mA - 1.2 - Drain-Source On-State Resistance RDS(on) Ω Zero Gate Voltage Drain Current IDSS VDS=16V,VGS=0V - 0.02 1 uA Gate-Source Leakage Current IGSS VGS=+4.5V,VDS=0V - +0.05 +1 uA Gate-Source Leakage Current IGSS VGS=+10V,VDS=0V - +2 +10 uA - 0.92 - - 0.31 - - 0.08 - - 50 - - 10 - - 8.5 - - 4 - - 20 - - 12 - - 25 - - - 500 mA - 0.91 1.3 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, ID=500mA, VGS=4.5V(Note 1,2) VDS=10V, VGS=0V, f=1.0MHZ nC pF Switching Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDD=10V, ID=500mA, VGS=4.5V, RG=6Ω(Note 1,2) ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=500mA, VGS=0V NOTES : 1. Pulse width