PJE8407_R1_00001

PPJE8407 20V P-Channel Enhancement Mode MOSFET Voltage -20 V SOT-523 -500mA Current Unit : inch(mm) Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Load switch, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-523 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00007 ounces, 0.002 grams  Marking: E07 o Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS +10 V ID -500 mA IDM -1000 mA 300 mW 2.4 mW/ oC Continuous Drain Current Pulsed Drain Current o Power Dissipation Ta=25 C o Derate above 25 C Operating Junction and Storage Temperature Range PD TJ,TSTG -55~150 RθJA 417 o C Typical Thermal resistance - Junction to Ambient (Note 3) April 26,2016-REV.01 o C/W Page 1 PPJE8407 o Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.3 -0.59 -1.0 V VGS=-4.5V, ID=-500mA - 0.9 1.2 VGS=-2.5V, ID=-200mA - 1.07 1.5 VGS=-1.8V, ID=-100mA - 1.25 2.2 VGS=-1.5V, ID=-40mA - 1.42 3.6 VGS=-1.2V, ID=-10mA - 1.7 6.0 Drain-Source On-State Resistance RDS(on) Ω Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V - - -1 uA Gate-Source Leakage Current IGSS VGS=+8V, VDS=0V - +2 +10 uA - 1.4 - - 0.19 - - 0.2 - - 38 - - 15 - - 9 - - 7.2 - - 21 - - 85 - - 116 - - - -500 mA - -0.93 -1.3 V Dynamic (Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=-10V, ID=-500mA, VGS=-4.5V (Note 1,2) VDS=-10V, VGS=0V, f=1.0MHZ VDD=-10V, ID=-500mA, VGS=-4.5V, RG=6Ω (Note 1,2) nC pF ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=-500mA, VGS=0V NOTES : 1. Pulse width