PJESD5V0QL4G

PJESD5V0QL4G

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJESD5V0QL4G - LOW CAPACITANCE TVS/ZENER ARRAYS FOR ESD PROTECTION - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
PJESD5V0QL4G 数据手册
PJESD5V0QL4G, L5G LOW CAPACITANCE TVS/ZENER ARRAYS FOR ESD PROTECTION These 4 and 5 TVS/Zener Arrays have been designed to protect sensitive equipment against ESD in CMOS circuitry operating at 5V. These TVS arrays offers an integrated solution to protect 4 or 5 data lines in applications, where the board space is a premium, in a Quad Flat no-Lead package that only occupies an area of 1.8 sq mm. SPECIFICATION FEATURES IEC61000-4-2 ESD 20kV Air, 15kV Contact Compliance Low Leakage Current, Maximum of 1µA at rated voltage 1 DRAFT Maximum Capacitance of 15pF per device at 0Vdc 1MHz Peak Power Dissipation of 20W under 8/20µs Waveform Quad Flat No Lead package QFN (1.2x1.5 sq mm, Height: 0.75mm) Lead Free Package 100% Tin Plating, Matte finish PJESD5V0QL4G 1 GND 2 3 APPLICATIONS Personal Digital Assistant (PDA) Digital Cameras Portable Instrumentation Mobile Phones and Accessories MP3 Players 6 5 NC 4 PJESD5V0QL5G MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Waveform) ESD Voltage (HBM Per MIL STD883C - Method 3015-6) Operating Temperature Range Storage Temperature Range Symbol P PP I PPM V ESD TJ Tstg Value 20 TBD 20 -55 to +150 -55 to +150 Units W A kV °C °C ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol V WRM VBR IR Vc Cj I BR = 1mA VR = 5V I pp = TBD 0 Vdc Bias f = 1MHz betweeen I/O lines and Conditions Min Typical Max 5 Units V V 6 1 TBD TBD TBD 15 µA V pF 7/18/2006 Page 1 www.panjit.com PJESD5V0QL4G, L5G TYPICAL CHARACTERISTIC CURVES (Per Device) Tj = 25°C Clamping Voltage vs 8/20µs Ipp Pulse Waveform 110 100 90 5 4 Percent of Ipp 80 70 60 50 40 30 20 10 Rise time 10-90% - 8µs 50% of Ipp @ 20µs Ipp, Amps 3 TBD 8 8.2 8.4 8.6 8.8 9 Clamping Voltage, V DRAFT 2 1 0 0 5 10 15 time, µsec 20 25 30 Typical Capacitance vs. Bias Voltage @1MHz 35 30 Capacitance, pF 25 20 15 10 5 0 0 1 2 3 Bias Voltage, Vdc 4 5 TBD 7/18/2006 Page 2 www.panjit.com PJESD5V0QL4G, L5G PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT 0.30±0.05 mm 1.5±0.05 mm 0.6±0.05 mm DRAFT 1.2±0.05 mm 0.20±0.05 mm 0.35±0.05 mm 0.5 mm 22.04 mm 0.75±0.025 mm 0.2±0.025 mm 12.0 12.0 25.0 18.0 23.0 49.0 48.0 53.0 19.7 19.7 Suggested Pad Layout (in mils) Alternate Pad Layout SOT666 (in mils) 7/18/2006 Page 3 www.panjit.com
PJESD5V0QL4G 价格&库存

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