PJESDZ6V8-2G

PJESDZ6V8-2G

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJESDZ6V8-2G - E.S.D. Dual Protection Diode Array - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
PJESDZ6V8-2G 数据手册
PJESDZ6V8-2G E.S.D. Dual Protection Diode Array This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up to 2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in application where the board space is a premium, in our SOT523 package version. PANJIT SOT523 3 SPECIFICATION FEATURES IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance Low Leakage Current, Maximum of 0.5µA at rated voltage Maximum Capacitance of 10pF per device at 0Vdc 1MHz Peak Power Dissipation of 20W 8/20µs Waveform Pin to pin compatible with standard SOT523 Lead Free Package 100% Tin Plating, Matte finish Low profile, Max height of 0.55mm 1 2 3 APPLICATIONS Mobile Phones Digital Cameras Notebooks PC's 1 2 MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Waveform) ESD Voltage (HBM Per MIL STD883C - Method 3015-6) Operating Temperature Range Storage Temperature Range Symbol P PP I PPM V ESD TJ Tstg Value 20 2 20 -55 to +125 -55 to +150 Units W A kV °C °C ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance* Symbol V WRM VBR IR Vc Cj I BR = 1mA VR = 5V I pp = 2A 0 Vdc Bias f = 1MHz between pin 1, 2 to 3 (Gnd) Conditions Min Typical Max 5.0 Units V V µA V pF 6.2 7.2 0.5 10 9 10 * Capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration. 12/9/2008 Page 1 www.panjit.com PJESDZ6V8-2G TYPICAL CHARACTERISTIC CURVES (Per Device) Tj = 25°C Pulse Waveform 110 100 90 80 Percent of Ipp 70 60 50 40 30 20 10 0 0 5 10 15 time, µsec 20 25 30 Rise time 10-90% - 8µs 50% of Ipp @ 20µs Clamping Voltage vs 8/20µs Ipp 9.5 9 Clamping Voltage, V 8.5 8 7.5 7 6.5 0 0.5 1 1.5 Peak Current, A 8/20µs 2 Off-State Capacitance vs DC Bias 10 Junction Capacitnace, pF 9 8 7 6 5 4 0 1 2 3 Vdc Bias, V 4 5 12/9/2008 Page 2 www.panjit.com PJESDZ6V8-2G PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT 12/9/2008 Page 3 www.panjit.com
PJESDZ6V8-2G 价格&库存

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