PJF12N65

PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1D G 3S 12D G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION 1 TYPE PJP12N65 PJF12N65 MARKING P12N65 F12N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 2 N6 5 P J F 1 2 N6 5 Uni ts V V 650 +30 12 48 175 1 .4 12 48 52 0 .4 2 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 990 0 .7 6 2 .5 2 .4 100 O C Avalanche Energy with Single Pulse IAS=12A, VDD=90V, L=12mΗ mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.25.2009 PAGE . 1 PJP12N65 / PJF12N65 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 6.0A VDS=650V, VGS=0V V GS =+ 3 0 V, V D S =0 V 650 2 .0 - 0.66 - 4 .0 0.8 10 +100 V V Ω uA nΑ Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd t d (o n) tr t d (o ff) tf C C C i ss - 4 6 .8 9 .2 14.6 16.2 26.8 56 2 4 .6 1800 145 16 62 24 42 ns 98 38 2450 195 22 pF nC V D S = 5 2 0 V, ID = 1 2 A , V GS =1 0 V - VDD=325V, I D =12A V GS =1 0 V, RG=25Ω - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS = 1 2 A , V GS =0 V V GS =0 V, IF = 1 2 A d i /d t=1 0 0 A /us - 450 5 .0 12 48 1 .4 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. STAD-DEC.25.2009 PAGE . 2 PJP12N65 / PJF12N65 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) ID - Drain Source Current (A) 24 20 16 12 8 4 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) VGS= 20V~ 6.0V 100 VDS =50V 10 TJ = 125oC 5.0V 25oC -55oC 1 0.1 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 8 Fig.1 Output Characteristric Fig.1 Fig.2 Transfer Characteristric 1.5 RDS(ON) - On Resistance(Ω ) 3 RDS(ON) - On Resistance(Ω ) 2.5 2 1.2 0.9 VGS=10V 0.6 VGS = 20V 0.3 0 ID =6.0A 1.5 1 TJ =25oC 0.5 0 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 3000 C - Capacitance (pF) VGS =10 V ID =6.0A 2500 f = 1MHz VGS = 0V Ciss 2000 1500 1000 Coss 500 0 Crss -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ - Junction Temperature (oC) VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature STAD-DEC.25.2009 Fig.6 Capacitance PAGE. 3 ℃ PJP12N65 / PJF12N65 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Qg - Gate Charge (nC) 100 VDS=520V VDS=325V VDS=130V IS - Source Current (A) ID =12A VGS = 0V 10 TJ = 125oC 1 25oC -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform 1.2 Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(Normalized) ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-DEC.25.2009 PAGE. 4 PJP12N65 / PJF12N65 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.25.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br