PJF2N70

PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET FEATURES • 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives I TO-220AB/TO-251 ITO-220AB TO -251 2 1 DS G G2 D3 S MECHANICAL DATA • Case: TO-220AB / TO-251 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJF2N70 PJU2N70 MARKING F2N70 U2N70 PACKAGE ITO-220AB TO-251 PACKING 50PCS/TUBE 80PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n D e r a t i ng F a c t o r T A = 2 5 OC S ym b o l V DS V GS ID ID M PD T J , T S TG E AS R θJC R θJA P J F 2 N7 0 700 +30 2 8 20 0 .1 6 P J U2 N7 0 U ni t s V V 2 8 31 0 .2 5 A A W O O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e -5 5 to +1 5 0 140 6 .2 5 6 2 .5 4 100 O C Avalanche Energy with Single Pulse IAS=2A, VDD=50V, L=45mΗ mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-NOV.24.2009 PAGE . 1 PJF2N70 / PJU2N70 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S ( t h) R D S ( o n) I DSS I GS S V GS = 0 V , I D = 2 5 0 uA V D S = V GS , I D = 2 5 0 uA VGS= 10V, I D= 1A VDS=700V, VGS=0V V G S =+ 3 0 V , V D S = 0 V 700 2 .0 - 5.5 - 4 .0 6.5 10 +100 V V Ω uA nΑ G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o Ga te Vo lta g e D r a i n C ur r e nt Gate Body Leakage Dynamic To t a l G a t e C h a r g e G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a nc e Qg Q gs Q gd t d ( o n) tr t d (o ff) tf C C C iss - 1 0 .8 2 .1 4.5 11.2 10.8 2 2 .4 1 6 .8 338 28.6 2.4 18 16 ns 31 24 395 65 3.6 pF nC V D S = 5 6 0 V , ID = 2 A V GS = 1 0 V - VDD=350V ,I D =2A VGS=10V , RG=25Ω - oss V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ - rss S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt IS I SM V SD t rr Q rr IS = 2 A , V G S = 0 V V G S = 0 V , IF = 2 A d i / d t = 1 0 0 A / us - 260 1 .0 9 2 .0 8 .0 1 .4 - A A V ns uC M a x. P ul s e d S o ur c e C ur r e nt D i o d e F o rwa rd Vo lta g e R e v e r s e R e c o v e r y Ti m e R e ve r s e R e c o ve r y C ha r g e NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. STAD-NOV.24.2009 PAGE . 2 PJF2N70 / PJU2N70 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) Typical 4 ID - Drain-to-Source Current (A) 10 ID - Drain Source Current (A) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 VGS= 20V~ 6.0V VDS=40V 5.0V TJ = 125oC 1 25oC -55oC 0.1 2 3 4 5 6 7 8 15 20 25 30 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric Fig.2 Transfer Characteristric 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 7.0 RDS(ON) - On Resistance(Ω ) RDS(ON) - On Resistance(Ω ) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2 4 6 8 TJ =25oC ID =1A VGS=10V VGS = 20V 0 1 2 3 4 5 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 C - Capacitance (pF) VGS =10 V ID =1.0A 500 400 Ciss 300 200 100 0 0 Crss 5 10 15 20 25 30 f = 1MHz VGS = 0V Coss TJ - Junction Temperature (oC) VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature STAD-NOV.24.2009 Fig.6 Capacitance PAGE. 3 PJF2N70 / PJU2N70 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 100 VDS=480V VDS=300V VDS=120V IS - Source Current (A) ID =2A VGS = 0V 10 TJ = 125oC 1 25oC -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 Qg - Gate Charge (nC) VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. 1.2 Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(NORMALIZED) DSS Breakdown ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-NOV.24.2009 PAGE. 4 PJF2N70 / PJU2N70 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-NOV.24.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br