PJF840

PJP840 / PJF840 500V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 500V, RDS(ON)=0.9Ω@VGS=10V, ID=4A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 D S MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP840 PJF840 MARKING P840 F840 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te - S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma x i mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA PJP840 500 +30 8 32 125 1 .0 PJF840 Uni ts V V 8 32 45 0 .3 6 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 514 1 .0 6 2 .5 2 .7 8 100 O C Avalanche Energy with Single Pulse IAS=8.0A, VDD=72V, L=14mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE November 24,2009-REV.00 PAGE . 1 PJP840 / PJF840 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 4A VDS=500V, VGS=0V V GS =+ 3 0 V, V D S =0 V 500 2 .0 - 0.62 - 4 .0 0.9 10 +100 V V Ω uA nΑ Ga te T hre s ho ld Vo lta g e D ra i n- S o urc e On-S ta te Re s i s ta nc e Ze ro G a te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te - S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-O n D e la y Ti me Turn- On Ri s e Ti me Turn-O ff D e la y Ti me Turn-O ff F a ll Ti me Inp ut C a p a c i ta nc e Outp u t C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 3 1 .5 5 .9 13.4 18.8 32.6 8 4 .8 4 5 .2 11 0 0 115 7.8 26 42 ns 11 0 60 1360 150 10 pF nC V D S =4 0 0 V, I D =8 A V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=250V , I D =8A VGS=10V , RG=25Ω - o ss V D S =2 5 V, V GS =0 V f=1 .0 M H Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS =8 A , V GS =0 V V GS =0 V, IF =8 A d i /d t= 1 0 0 A /us - 270 1 .8 9 8 .0 32 1 .5 - A A V ns uC Ma x.P u ls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. November 24,2009-REV.00 PAGE . 2 PJP840 / PJF840 PJP840 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) ID - Drain Source Current (A) 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VGS= 20V~ 7.0V VDS =50V 10 6.0V TJ = 125oC 1 25oC -55oC 5.0V 0.1 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric Fig.2 Transfer Characteristric 1 RDS(ON) - On Resistance(Ω ) 1.2 RDS(ON) - On Resistance(Ω ) 0.9 0.8 VGS=10V 0.7 0.6 0.5 0 2 4 6 8 10 VGS = 20V 1.1 1 0.9 0.8 0.7 0.6 0.5 2 TJ =25oC ID =4A ID - Drain Current (A) 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 2000 C - Capacitance (pF) VGS =10 V ID =4.0A 1600 1200 800 400 0 Crss 0 5 10 15 20 Ciss f = 1MHz VGS = 0V Coss -50 -25 0 25 50 75 100 125 150 25 30 TJ - Junction Temperature (oC) VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature November 24,2009-REV.00 Fig.6 Capacitance PAGE. 3 PJP840 / PJF840 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) 100 VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 ID =8A VDS=400V VDS=250V VDS=100V IS - Source Current (A) VGS = 0V 10 TJ = 125oC 1 25oC -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 Qg - Gate Charge (nC) VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. 1.2 Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(NORMALIZED) ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature November 24,2009-REV.00 PAGE. 4 PJP840 / PJF840 LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. November 24,2009-REV.00 PAGE . 5