PJMD390N65EC_L2_00001

PJMD390N65EC 650V N-Channel Super Junction MOSFET Voltage 650 V Rdson 390 mΩ Current 10 A Qg 19 nC TO-252AA Feature:  RDS(ON) Max, VGS@10V: 390mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0113 ounces, 0.3217 grams Application  Monitor Power, TV Power, PD Charger Absolute Maximum Ratings (TA = 25 oC unless otherwise specified) SYMBOL LIMIT Drain-Source Voltage @ Tjmax PARAMETER VDS 700 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 TC=25oC Continuous Drain Current TC ID =100oC TC=25oC Pulsed Drain Current Single Pulse Avalanche Energy MOSFET dv/dt ruggedness Power Dissipation TC =25oC TC =100oC 10 6.2 UNITS V A IDM 22 A EAS 220 mJ dv/dt 50 V/ns PD 87.5 35 W TJ,TSTG -55~150 oC SYMBOL MAXIMUM UNITS Junction-to-Case RθJC 1.43 oC/W Junction-to-Ambient (Note 3) RθJA 62.5 oC/W Operating Junction and Storage Temperature Range Thermal Characteristics PARAMETER Thermal Resistance October 14,2021 PJMD390N65EC-REV.00 Page 1 PJMD390N65EC Electrical Characteristics (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 650 730 - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 3.0 4 Drain-Source On-State Resistance RDS(on) VGS=10V, ID=5.0A(Note 1) - 340 390 mΩ V Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Transfer characteristics gfs VDS=20V, ID=11A - 10 - S - 19 - - 4 - - 8 - - 726 - - 29 - - 8 - - 37 - - 30 - - 50 - - 87 - - 42 - - 6.8 - Ω - - 10 A Dynamic (Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective Output Capacitance Energy Related Co(er) VDS=400V, VGS=0V, f=250kHz VGS=0V, f=250kHz nC pF (Note 4) td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Gate Resistance VGS=10V VDS=0V to 400V, Turn-On Delay Time Turn-Off Fall Time VDS=520V, ID=11A, VDD=325V, ID=11A, VGS=10V, RG=25Ω (Note 2) tf Rg f=1.0MHz ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage VSD IS=10A, VGS=0V - 0.89 1.5 V Reverse Recovery Charge Qrr IS=11A - 3.3 - μC Reverse Recovery Time Trr di/dt=100A/μs - 291 - ns NOTES : 1. Pulse width