PJMF280N65E1_T0_00001

PJMF280N65E1 650V N-Channel Super Junction MOSFET Voltage 650 V Rdson 280 mΩ Current 13.8 A Qg 30 nC ITO-220AB-F Feature:  RDS(ON) Max, VGS@10V: 280mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: ITO-220AB-F package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.068 ounces, 2 grams Application  PFC, TV Power, PC Power, PD Charger, Adapter, UPS Absolute Maximum Ratings (TA = 25 oC unless otherwise specified) SYMBOL LIMIT Drain-Source Voltage @ Tjmax PARAMETER VDS 700 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 TC=25oC Continuous Drain Current TC =100oC TC=25oC Pulsed Drain Current Single Pulse Avalanche Energy MOSFET dv/dt ruggedness Power Dissipation TC =25oC TC =100oC Insulation Withstand Voltage for ITO-220AB-F ID 13.8 8.7 UNITS V A IDM 41.4 A EAS 113 mJ dv/dt 50 V/ns PD 35.7 14.3 W VISO 3.5 kV TJ,TSTG -55~150 oC SYMBOL MAXIMUM UNITS Junction-to-Case RθJC 3.5 oC/W Junction-to-Ambient (Note 3) RθJA 62.5 oC/W Operating Junction and Storage Temperature Range Thermal Characteristics PARAMETER Thermal Resistance September 2,2021 PJMF280N65E1-REV.01 Page 1 PJMF280N65E1 Electrical Characteristics (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 650 710 - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 3.2 4 Drain-Source On-State Resistance RDS(on) VGS=10V, ID=4.4A(Note 1) - 248 280 mΩ V Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Transfer characteristics gfs VDS=20V, ID=13.8A - 13 - S - 30 - - 6 - - 13 - - 1040 - - 38 - - 11 - - 48 - - 43 - - 69 - - 171 - - 66 - - 21 - Ω - - 13.8 A Dynamic (Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective Output Capacitance Energy Related Co(er) VDS=400V, VGS=0V, f=250kHz VGS=0V, f=250kHz nC pF (Note 4) td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Gate Resistance VGS=10V VDS=0V to 520V, Turn-On Delay Time Turn-Off Fall Time VDS=520V, ID=13.8A, VDD=325V, ID=13.8A, VGS=10V, RG=25Ω (Note 2) tf Rg f=1.0MHz ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage VSD IS=13.8A, VGS=0V - - 1.4 V Reverse Recovery Charge Qrr IS=13.8A - 5.4 - μC Reverse Recovery Time Trr di/dt=100A/μs - 344 - ns NOTES : 1. Pulse width