PJMF380N65E1_T0_00001

PJMF380N65E1 650V N-Channel Super Junction MOSFET Voltage 650 V Rdson 380 mΩ Current 10.6 A Qg 22 nC ITO-220AB-F Feature:  RDS(ON) Max, VGS@10V: 380mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: ITO-220AB-F package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.068 ounces, 2 grams Application  PFC, TV Power, PC Power, PD Charger, Adapter, UPS Absolute Maximum Ratings (TA = 25 oC unless otherwise specified) SYMBOL LIMIT Drain-Source Voltage @ Tjmax PARAMETER VDS 700 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 TC=25oC Continuous Drain Current TC ID =100oC TC=25oC Pulsed Drain Current Single Pulse Avalanche Energy MOSFET dv/dt ruggedness Power Dissipation TC =25oC TC =100oC 6.7 V A IDM 31.8 A EAS 129 mJ dv/dt 50 V/ns PD Insulation Withstand Voltage for ITO-220AB-F 10.6 UNITS 33 13 W VISO 3.5 kV TJ,TSTG -55~150 oC SYMBOL MAXIMUM UNITS Junction-to-Case RθJC 3.8 oC/W Junction-to-Ambient (Note 3) RθJA 62.5 oC/W Operating Junction and Storage Temperature Range Thermal Characteristics PARAMETER Thermal Resistance September 2,2021 PJMF380N65E1-REV.01 Page 1 PJMF380N65E1 Electrical Characteristics (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 650 710 - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 3.4 4 Drain-Source On-State Resistance RDS(on) VGS=10V, ID=3.2A(Note 1) - 331 380 mΩ V Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Transfer characteristics gfs VDS=20V, ID=10.6A - 10 - S - 22 - - 5 - - 11 - - 769 - - 32 - - 10 - - 41 - - 37 - - 58 - - 121 - - 49 - - 19 - Ω - - 10.6 A Dynamic (Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective Output Capacitance Energy Related Co(er) VDS=400V, VGS=0V, f=250kHz VGS=0V, f=250kHz nC pF (Note 4) td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Gate Resistance VGS=10V VDS=0V to 520V, Turn-On Delay Time Turn-Off Fall Time VDS=520V, ID=10.6A, VDD=325V, ID=10.6A, VGS=10V, RG=25Ω (Note 2) tf Rg f=1.0MHz ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage VSD IS=10.6A, VGS=0V - - 1.4 V Reverse Recovery Charge Qrr IS=10.6A - 3.9 - μC Reverse Recovery Time Trr di/dt=100A/μs - 295 - ns NOTES : 1. Pulse width