PJMF580N60E1_T0_00001 数据手册
PJMF580N60E1
600V N-Channel Super Junction MOSFET
Voltage
600 V
Rdson
580 mΩ
Current
8A
Qg
15 nC
ITO-220AB-F
Feature:
RDS(ON) Max, VGS@10V: 580mΩ
Easy to use/ drive
High Speed Switching and Low RDS(ON)
100% Avalanche Tested
100% Rg Tested
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: ITO-220AB-F package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.068 ounces, 2 grams
Application
TV Power, PD Charger, Adapter
Absolute Maximum Ratings (TA = 25 oC unless otherwise specified)
SYMBOL
LIMIT
Drain-Source Voltage @ Tjmax
PARAMETER
VDS
650
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
TC=25oC
Continuous Drain Current
TC
ID
=100oC
TC=25oC
Pulsed Drain Current
Single Pulse Avalanche Energy
MOSFET dv/dt ruggedness
Power Dissipation
TC
=25oC
TC
=100oC
5
V
A
IDM
24
A
EAS
50
mJ
dv/dt
50
V/ns
PD
Insulation Withstand Voltage for ITO-220AB-F
8
UNITS
28
11
W
VISO
3.5
kV
TJ,TSTG
-55~150
oC
SYMBOL
MAXIMUM
UNITS
Junction-to-Case
RθJC
4.5
oC/W
Junction-to-Ambient (Note 3)
RθJA
62.5
oC/W
Operating Junction and Storage Temperature Range
Thermal Characteristics
PARAMETER
Thermal Resistance
September 2,2021
PJMF580N60E1-REV.01
Page 1
PJMF580N60E1
Electrical Characteristics (TA = 25 oC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
600
680
-
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
2
3.3
4
Drain-Source On-State Resistance
RDS(on)
VGS=10V, ID=2.5A(Note 1)
-
530
580
mΩ
V
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
-
-
1
uA
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
-
-
±100
nA
Transfer characteristics
gfs
VDS=20V, ID=8A
-
7
-
S
-
15
-
-
3
-
-
8
-
-
497
-
-
26
-
-
9
-
-
33
-
-
29
-
-
49
-
-
87
-
-
41
-
-
26
-
Ω
-
-
8
A
Dynamic
(Note 5)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Effective Output Capacitance
Energy Related
Co(er)
VDS=400V, VGS=0V,
f=250kHz
VGS=0V, f=250kHz
nC
pF
(Note 4)
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Gate Resistance
VGS=10V
VDS=0V to 480V,
Turn-On Delay Time
Turn-Off Fall Time
VDS=480V, ID=8A,
VDD=300V, ID=8A,
VGS=10V, RG=25Ω
(Note 2)
tf
Rg
f=1.0MHz
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
IS
Diode Forward Voltage
VSD
IS=8A, VGS=0V
-
-
1.4
V
Reverse Recovery Charge
Qrr
IS=8A
-
2.8
-
μC
Reverse Recovery Time
Trr
di/dt=100A/μs
-
262
-
ns
NOTES :
1. Pulse width
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