PJMH074N60FRC_T0_00601

PJMH074N60FRC 600V N-Channel Super Junction MOSFET Voltage 600 V Rdson 74 mΩ Current 53 A Qg 84 nC TO-247AD-3LD Feature:  RDS(ON) Max, VGS@10V: 74mΩ  Fast recovery Qrr /Trr performance.  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-247AD-3LD package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 6.231 grams Application  PFC, TV Power, PC Power, PD Charger, Adapter, UPS Absolute Maximum Ratings (TA = 25 oC unless otherwise specified) SYMBOL LIMIT Drain-Source Voltage @ Tjmax PARAMETER VDS 650 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 TC=25oC Continuous Drain Current TC=100oC TC=25oC Pulsed Drain Current Single Pulse Avalanche Energy MOSFET dv/dt ruggedness Power Dissipation TC =25oC TC =100oC ID 53 33 UNITS V A IDM 117 A EAS 1750 mJ dv/dt 100 V/ns PD 446 178 W TJ,TSTG -55~150 oC SYMBOL MAXIMUM UNITS Junction-to-Case RθJC 0.3 oC/W Junction-to-Ambient (Note 3) RθJA 50 oC/W Operating Junction and Storage Temperature Range Thermal Characteristics PARAMETER Thermal Resistance August 16,2022 PJMH074N60FRC-REV.00 Page 1 PJMH074N60FRC Electrical Characteristics (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=1mA 600 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2.5 3.5 4.5 Drain-Source On-State Resistance RDS(on) VGS=10V,ID=26.5A(Note1) - 63 74 mΩ V Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V - - 10 uA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Transfer characteristics gfs VDS=20V, ID=26.5A - 27 - S - 84 - - 21 - - 33 - - 3871 - - 108 - - 7.5 - - 160 - - 70 - - 96 - - 237 - - 90 - - 0.7 - Ω - - 53 A Dynamic (Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective Output Capacitance Energy Related Co(er) VDS=400V, VGS=0V, f=250kHz VGS=0V, f=250kHz nC pF (Note 4) td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Gate Resistance VGS=10V VDS=0V to 400V, Turn-On Delay Time Turn-Off Fall Time VDS=480V, ID=26.5A, VDD=300V, ID=26.5A, VGS=10V, RG=25Ω (Note 2) tf Rg f=1.0MHz ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage VSD IS=26.5A, VGS=0V - 0.9 1.5 V Reverse Recovery Charge Qrr IS=26.5A - 1.0 - μC Reverse Recovery Time Trr di/dt=100A/μs - 150 - ns NOTES : 1. Pulse width