PJMH190N60E1_T0_00601

PJMH190N60E1 600V N-Channel Super Junction MOSFET Voltage 600 V Rdson 180 mΩ Current 20.6 A Qg 40 nC TO-247AD-3LD Feature:  RDS(ON) Max, VGS@10V: 180mΩ  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-247AD-3LD package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 6.231 grams Application  TV Power / Industrial Power / PC ATX Power.. Absolute Maximum Ratings (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL LIMIT Drain-Source Voltage @ Tjmax VDS 650 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 TC=25oC Continuous Drain Current Pulsed Drain Current TC=100oC (Note 1) TC=25oC ID 20.6 13 UNITS V A IDM 62 A Single Pulse Avalanche Energy EAS 420 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns TC=25oC Power Dissipation TC =100oC PD 160 64 W TJ,TSTG -55~150 oC SYMBOL MAXIMUM UNITS Junction-to-Case RθJC 0.71 oC/W Junction-to-Ambient RθJA 50 oC/W Operating Junction and Storage Temperature Range Thermal Characteristics PARAMETER Thermal Resistance August 18,2022 PJMH190N60E1-REV.00 Page 1 PJMH190N60E1 Electrical Characteristics (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 600 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2.8 - 3.8 Drain-Source On-State Resistance RDS(on) VGS=10V, ID=9.5A(Note 1) - 155 180 mΩ V Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Transfer characteristics gfs VDS=20V, ID=20A - 18 - S - 40 - - 9 - - 17 - - 1410 - - 50 - - 13 - - 68 - - 51 - - 81 - - 174 - - 78 - - 8 - Ω - - 20.6 A Dynamic (Note 3) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective Output Capacitance Energy Related (Note 3) VDS=480V, ID=20A, VGS=10V Co(er) VGS=0V, f=250kHz pF (Note 3) td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Gate Resistance f=250kHz VDS=0V to 480V, Turn-On Delay Time Turn-Off Fall Time VDS=400V, VGS=0V, nC VDD=300V, ID=20A, VGS=10V, RG=25Ω (Note 3) tf Rg f=1.0MHz ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage VSD IS=20A, VGS=0V - - 1.4 V Reverse Recovery Charge Qrr IS=20A - 6.5 - μC Reverse Recovery Time Trr di/dt=100A/μs - 380 - ns NOTES : 1. Pulse width