PJP1N80

PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB/TO-251 TO-220AB TO -251 3 23 12 S 1D G G 1 D 2 2 S 3 3 MECHANICAL DATA • Case: TO-220AB / TO-251 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERINGINFORMATION TYPE PJP1N80 PJU1N80 MARKING P1N80 U1N80 PACKAGE TO-220AB TO-251 PACKING 50PCS/TUBE 80PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng fa c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 N8 0 800 +30 1 4 45 0 .3 6 P J U1 N8 0 Uni ts V V 1 4 31 0 .2 5 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 9 .8 2 .7 8 6 2 .5 4 100 O C Avalanche Energy with Single Pulse IAS=1.4A, VDD=50V, L=10mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-NOV.24.2009 PAGE . 1 PJP1N80 / PJU1N80 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 0.5A VDS=800V, VGS=0V V GS =+ 3 0 V, V D S =0 V 800 3 .1 - 13.5 - 4 .4 16 10 +100 V V Ω uA nΑ Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 6 .8 1 .3 3.1 11.4 14.3 3 6 .7 1 5 .7 160 15 1.35 ns 200 19 1.75 pF nC V D S = 6 4 0 V, ID = 0 .8 A V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=400V, I D =0.8A VGS=10V , RG=25Ω - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS =1 A , V GS =0 V V GS =0 V, IF = 1 A d i /d t=1 0 0 A /us - 160 0 .3 1 .0 4 .0 1 .5 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. STAD-NOV.24.2009 PAGE . 2 ℃ PJP1N80 / PJU1N80 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 1.4 1.2 1 0.8 0.6 0.4 VGS= 20.0V ~ 7.0V VDS =40V 1 6.0V 0.1 TJ = 125oC 25oC -55oC 5.0V 0.2 0 0 5 10 15 20 25 30 0.01 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric Fig.2 Transfer Characteristric RDS(ON) - On-Resistance (Ω ) 22 RDS(ON) - On-Resistance (Ω ) 20 18 16 14 12 10 VGS=10V 24 22 20 18 16 14 12 ID =1A VGS = 20V TJ = 25oC 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID - Drain Current (A) 0 5 10 15 20 25 30 VGS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.2 300 C - Capacitance (pF) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 VGS =10 V ID =0.5A 250 200 150 100 50 0 0 Crss 5 10 15 20 Coss f = 1MHz VGS = 0V Ciss -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) 25 30 VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature STAD-NOV.24.2009 Fig.6 Capacitance PAGE. 3 PJP1N80 / PJU1N80 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 VDS=640V VDS=400V VDS=160V 10 IS - Source Current (A) ID =0.8A VGS = 0V 1 TJ = 125oC 25oC -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 Qg - Gate Charge (nC) VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. 1.2 Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(NORMALIZED) ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-NOV.24.2009 PAGE. 4 PJP1N80 / PJU1N80 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-NOV.24.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br