PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
1
2 G
3 D
S
1
2 G
3 S D
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP2N60 P JF2N60
MARKING
P2N60 F2N60
PACKAGE
TO-220AB ITO-220AB
PACKING
Gate
50PCS/TUBE 50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J P 2 N6 0 600 +30 2 8 45 0 .3 6
P J F 2 N6 0
Uni ts V V
2 8 20 0 .1 6
A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0 120 2 .7 8 6 2 .5 6 .2 5 100
O
C
Avalanche Energy with Single Pulse
IAS=2.0A, VDD=50V, L=56mH
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
O
Note : 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009 PAGE . 1
PJP2N60 / PJF2N60
ELECTRICAL CHARACTERISTICS
( TA=25OC unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V D SS V GS (th) R D S (o n) I DSS I GS S
V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 1A VDS=600V, VGS=0V V GS =+ 3 0 V, V D S =0 V
600 2 .0 -
4.0 -
4 .0 4.6 10 +100
V V Ω uA nΑ
Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q
gd
-
9 .3 2 .0 3.3 10.8 10.4 2 3 .6 1 6 .2 320 30 3
13 18 16 ns 32 22 380 45 5.6 pF nC
V D S =4 8 0 V, I D =2 A V GS =1 0 V
-
t d (o n) tr t d (o ff) tf C C C
i ss
VDD=300V , I D =2A VGS=10V, RG=25Ω
-
o ss
V D S =2 5 V, V GS =0 V f=1 .0 MH Z
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS I SM V SD t rr Q
rr
IS =2 A , V GS =0 V V GS =0 V, IF =2 A d i /d t=1 0 0 A /us
-
230 1 .0
2 .0 8 .0 1 .4 -
A A V ns uC
Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
STAD-NOV.24.2009
PAGE . 2
PJP2N60 / PJF2N60 PJP2N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
4 ID - Drain-to-Source Current (A)
10
ID - Drain Source Current (A)
3.5 3 2.5 2 1.5 1 0.5 0 0 5 10
VGS= 20V~ 6.0V
VDS=40V
5.0V
TJ = 125oC
1
25oC
-55oC 0.1 2 3 4 5 6 7 8
15
20
25
30
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0
7.0
RDS(ON) - On Resistance(Ω )
RDS(ON) - On Resistance(Ω )
6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2 4 6 8 TJ =25oC
ID =1A
VGS=10V
VGS = 20V
0
1
2
3
4
5
10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance(Normalized)
2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150
C - Capacitance (pF)
VGS =10 V ID =1.0A
500 400 Ciss 300 200 100 0 0 Crss 5 10 15 20 25 30 f = 1MHz VGS = 0V
Coss
TJ - Junction Temperature
(oC)
VDS - Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
Fig.6 Capacitance
PAGE. 3
PJP2N60 / PJF2N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
VGS - Gate-to-Source Voltage (V)
12 10 8 6 4 2 0 0 2 4 6 8 10 12
100
VDS=480V VDS=300V VDS=120V
IS - Source Current (A)
ID =2A
VGS = 0V
10
TJ = 125oC
1
25oC -55oC
0.1
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4
Qg - Gate Charge (nC)
VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform Fig.
1.2
Fig.8 Source-Drain Diode Forward Voltage
BVDSS - Breakdown Voltage(NORMALIZED) DSS Breakdown
ID = 250µA
1.1
1
0.9
0.8 -50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJP2N60 / PJF2N60
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br
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