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PJP2N60

PJP2N60

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJP2N60 - 600V N-Channel Enhancement Mode MOSFET - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
PJP2N60 数据手册
PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP2N60 P JF2N60 MARKING P2N60 F2N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 2 N6 0 600 +30 2 8 45 0 .3 6 P J F 2 N6 0 Uni ts V V 2 8 20 0 .1 6 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 120 2 .7 8 6 2 .5 6 .2 5 100 O C Avalanche Energy with Single Pulse IAS=2.0A, VDD=50V, L=56mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-NOV.24.2009 PAGE . 1 PJP2N60 / PJF2N60 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 1A VDS=600V, VGS=0V V GS =+ 3 0 V, V D S =0 V 600 2 .0 - 4.0 - 4 .0 4.6 10 +100 V V Ω uA nΑ Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 9 .3 2 .0 3.3 10.8 10.4 2 3 .6 1 6 .2 320 30 3 13 18 16 ns 32 22 380 45 5.6 pF nC V D S =4 8 0 V, I D =2 A V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=300V , I D =2A VGS=10V, RG=25Ω - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS =2 A , V GS =0 V V GS =0 V, IF =2 A d i /d t=1 0 0 A /us - 230 1 .0 2 .0 8 .0 1 .4 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. STAD-NOV.24.2009 PAGE . 2 PJP2N60 / PJF2N60 PJP2N60 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) 4 ID - Drain-to-Source Current (A) 10 ID - Drain Source Current (A) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 VGS= 20V~ 6.0V VDS=40V 5.0V TJ = 125oC 1 25oC -55oC 0.1 2 3 4 5 6 7 8 15 20 25 30 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric Fig.2 Transfer Characteristric 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 7.0 RDS(ON) - On Resistance(Ω ) RDS(ON) - On Resistance(Ω ) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2 4 6 8 TJ =25oC ID =1A VGS=10V VGS = 20V 0 1 2 3 4 5 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 C - Capacitance (pF) VGS =10 V ID =1.0A 500 400 Ciss 300 200 100 0 0 Crss 5 10 15 20 25 30 f = 1MHz VGS = 0V Coss TJ - Junction Temperature (oC) VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature STAD-NOV.24.2009 Fig.6 Capacitance PAGE. 3 PJP2N60 / PJF2N60 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 100 VDS=480V VDS=300V VDS=120V IS - Source Current (A) ID =2A VGS = 0V 10 TJ = 125oC 1 25oC -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 Qg - Gate Charge (nC) VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. 1.2 Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(NORMALIZED) DSS Breakdown ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-NOV.24.2009 PAGE. 4 PJP2N60 / PJF2N60 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-NOV.24.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br
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