PJP6000

PJP6000 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=14mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: TO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : P6000 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C Li mi t 60 +20 60 210 90 5 3 .5 -5 5 to +1 5 0 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n PD TJ ,TS T G EAS RθJ C RθJ A O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e C Avalanche Energy with Single Pulse IA S =37A, VDD=30V, L=0.3mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 410 1 .4 62 O mJ C /W C /W O Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.11.2007 PAGE . 1 PJP6000 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s BVD SS V G S (th) RD S (o n) V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VG S =10V, I D =30A VG S =10V, I D =30A, Tc=125O C VD S =60V, VG S =0V 60 1 25 12 - 3 14 26 1 V V mΩ G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o Ga te Vo lta g e D r a i n C ur r e nt ID S S VD S =60V, VG S =0V, Tc=125O C 10 +100 - uA Gate Body Leakage Forward Transconductance IG S S g fS V G S =+2 0 V, V D S =0 V V D S > ID ( O N ) X R D S ( O N ) m a x , ID = 1 5 A nA S D ynami c To t a l G a t e C h a r g e G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e Qg Qg s Qg d td (o n) tr td (o ff) tf Ciss Coss C rs s V D S =2 5 V, V G S =0 V f=1 .0 MHZ VD D =30V , RL =15Ω ID =2A , VG E N =10V RG =2.5Ω V D S = 3 0 V , ID = 3 0 A V G S =10V - 40 3 .8 12 14.6 14.2 40 7 .3 1480 190 135 20 18 nC ns 60 9 .5 - pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is VSD IS = 3 0 A , V G S = 0 V - 0 .9 4 60 1 .2 A V Switching Test Circuit V IN V DD RL V OUT Gate Charge Test Circuit V GS V DD RL RG 1mA RG STAD-JUN.11.2007 PAGE . 2 PJP6000 Typical Characteristics Curves (TA=25 C,unless otherwise noted) O 100 ID - Drain-to-Source Current (A) 100 5.0V 6.0V~10 4.5V 80 60 40 ID - Drain Source Current (A) V =10V VDSDS=10V 80 60 25oC 40 TJ = 125oC 20 - 55oCT J =-55 0 2 2.5 3 3.5 4 4.5 5 O 4.0V 20 0 0 3 6 9 12 15 V DS - Drain-to-Source Voltage (V) T J=25 OC C 5.5 6 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 30 50 R DS(ON) - On-Resistance (m W ) 25 20 15 10 5 0 0 20 40 60 80 100 ID - Drain Current (A) R DS(ON) - On-Resistance (m W ) V GS = 10V ID =30A 40 30 125oC 20 10 0 2 4 6 TJ =25oC 8 10 V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance (Normalized) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 C - Capacitance (pF) V GS=10V VGS =10 V I D=30A ID =30A 3000 2500 2000 Ciss 1500 1000 500 Crss 0 Coss ff=1MHz = 1MHz V GS = 0V V GS =0V -50 -25 0 25 50 75 100 o 125 150 0 5 10 15 20 25 TJ - Junction Tem perature ( C) VDS - Drain-to-Source Voltage (V) FIG.5- On Resistance vs Junction Temperature FIG.6 - Capacitance STAD-JUN.11.2007 PAGE . 3 PJP6000 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 VGS - Gate-to-Source Voltage (V) IS - Source Current (A) V DS =30 V VDS =30V I D =30A ID =30A 100 V VGS GS=0V = 0V 10 T J =125 OC TJ = 125oC 1 -55oC T J =25 OC T J =-55 OC 25oC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD - Source-to-Drain Voltage (V) 1.6 Qg - Gate Charge (nC) Fig.7 - Gate Charge Fig.10 - Source-Drain Diode Forward Voltage 1.2 Vth - G-S Threshold Voltage (NORMALIZED) 1.2 BVDSS - Breakdown Voltage (NORMALIZED) I D =250uA I D =250uA 1.15 1.1 1.05 1 0.95 0.9 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ - Junction Tem perature ( oC) 150 -50 -25 0 25 50 75 100 125 150 T J - Junction Te m pe rature ( oC) Fig.8 - Threshold Voltage vs Junction Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 80 70 1000 ID - Drain Current (A) ID - Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 TJ - Junction Tem perature ( oC) 150 100 Rds(on) Limited 100us 10 DC 1ms 10ms 1 0.1 0.1 1 10 100 1000 V DS - Drain-to-Source Voltage (V) Fig.11 - Maximum Drain Current vs Junction Temperature Fig.12 - Safe Operation Area STAD-JUN.11.2007 PAGE . 4