PJP730

PJP730 / PJF730 400V N-Channel Enhancement Mode MOSFET FEATURES • 5.5A , 400V, RDS(ON)=0.95Ω@VGS=10V, ID=3.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP730 PJF730 MARKING P730 F730 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA PJP730 400 +30 5 .5 22 87 0 .7 PJF730 Uni ts V V 5 .5 22 50 0 .4 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 303 1 .4 3 6 2 .5 2 .5 100 O C Avalanche Energy with Single Pulse IAS=5.7A, VDD=50V, L=16.5mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-NOV.24.2009 PAGE . 1 PJP730 / PJF730 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 3A VDS=400V, VGS=0V V GS =+ 3 0 V, V D S =0 V 400 2 .0 - 0.9 - 4 .0 0.95 10 +100 V V Ω uA nΑ Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 1 6 .8 3 .4 7.2 10.7 15.6 2 4 .4 1 5 .6 560 69 6.2 16 18 ns 36 22 680 85 7.8 pF nC V D S =3 2 0 V, ID =5 .5 A V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=200V , I D =5.5A VGS=10V , RG=12Ω - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS =5 .5 A , V GS =0 V V GS =0 V, IF =5 .5 A d i /d t=1 0 0 A /us - 220 2 .0 5 .5 22 1 .5 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%. STAD-NOV.24.2009 PAGE . 2 Ω PJP730 / PJF730 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) 12 11 10 9 8 7 6 5 4 3 2 1 0 5 6.0V ID - Drain Source Current (A) VGS= 20V~ 7.0V VDS =50V 10 TJ = 125oC 1 25oC -55oC 5.0V 0.1 10 15 20 25 30 2 VDS - Drain-to-Source Voltage (V) 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 8 Fig.1 Output Characteristric Fig.2 Transfer Characteristric 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 1.4 RDS(ON) - On-Resistance (Ω ) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 RDS(ON) - On-Resistance (Ω ) ID =3A VGS=10V VGS = 20V TJ =25oC 0 2 4 6 8 10 12 2 ID - Drain Current (A) 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On Resistance(Normalized) 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 1000 C - Capacitance (pF) VGS =10 V ID =3.0A 800 600 400 200 0 Crss 0 5 10 15 20 Ciss f = 1MHz VGS = 0V Coss -50 -25 0 25 50 75 100 125 150 25 30 TJ - Junction Temperature (oC) VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature STAD-NOV.24.2009 Fig.6 Capacitance PAGE. 3 PJP730 / PJF730 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 4 8 12 16 20 100 VDS=320V VDS=200V VDS=80V IS - Source Current (A) ID =5.5A VGS = 0V 10 TJ = 125oC 1 25oC -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 Qg - Gate Charge (nC) VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. 1.2 BVDSS - Breakdown Voltage(NORMALIZED) Fig.8 Source-Drain Diode Forward Voltage ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-NOV.24.2009 PAGE. 4 PJP730 / PJF730 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-NOV.24.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br