PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request
MECHANICALDATA
• Case: TO-220 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : P75N06
Drain
PIN Assignment
Gate
1. Gate 2. Drain 3. Source Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt
1)
S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJC RθJA
Li mi t 60 +20 75 350 105 6 2 .5 -5 5 to + 1 5 0 400 1 .2 62
U ni t s V V A A W
O
M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2
C
mJ
O
C /W C /W
O
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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PJP75N06
ELECTRICALCHARACTERISTICS
P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 3 0 V , ID = 3 0 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 3 0 A , V G S = 0 V 0 .9 8 75 1 .5 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ VDD=30V , RL=15Ω ID=2A , VGEN=10V RG=2.5Ω V D S = 3 0 V , ID = 3 0 A V GS = 1 0 V 82 10 13.5 18.5 16.5 60 9 .0 4200 810 550 nC 25 20 ns 90 20 pF 42 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=60V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 5 A 60 1 40 1 3 .5 10.5 3 1 8 .0 mΩ 13.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s
Switching Test Circuit
V IN
V DD RL V OUT
Gate Charge Test Circuit
V GS
V DD RL
RG
1mA
RG
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PJP75N06
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
100
ID - Drain-to-Source Current (A)
80 3.5V 60 40 3.0V 20 2.5V 0 0 1 2 3 4 5 V DS - Drain-to-Source Voltage (V)
ID - Drain Source Current (A)
V GS=4.0V, 4.5V, 5.0V, 6.0V, 10.0V
80
V DS=10V
60
40
T J=25 OC
20
T J=125 OC
0 1 1.5 2 2.5
T J=-55 OC
3 3.5 4
V GS - Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
30
50
R DS(ON) - On-Resistance (m W )
25 20 15 10
R DS(ON) - On-Resistance (m W )
I D=30A
40 30
V GS=4.5V
20 10 0 2 4
T J=125 OC
V GS=10V
5 0 0 20 40 60 80 100 ID - Drain Current (A)
T J=25 OC
6 8 10
V GS - Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
R DS(ON) - On-Resistance (Normalized)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4
V GS=10V I D=30A
-50
-25
0
25
50
75
100
o
125
150
TJ - Junction Temperature ( C)
FIG.5- On Resistance vs Junction Temperature
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PJP75N06
VGS - Gate-to-Source Voltage (V)
10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 Qg - Gate Charge (nC)
Vgs
Qg
V DS =30V I D =30A
Vgs(th)
Qg(th)
Qsw
Qgs
Qgd
Qg
Fig.6 - Gate Charge Waveform
76
Fig.7 - Gate Charge
Vth - G-S Threshold Voltage (NORMALIZED)
1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50
BVDSS - Breakdown Voltage (V)
I D =250uA
I D =250uA
74 72 70 68 66 64 62 -50
-25 0 25 50 75 100 125 TJ - Junction Tem perature ( oC)
150
-25
0
25
50
75
100
125
150
TJ - Junction Tem perature ( oC)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
100
V GS =0V
IS - Source Current (A)
10
T J =125 OC
1
T J =-55 OC
T J =25 OC
0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD - Source-to-Drain Voltage (V) 1.6
Fig.10 - Source-Drain Diode Forward Voltage
LEGAL STATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
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