PJP830

PJP830 / PJF830 500V N-Channel Enhancement Mode MOSFET FEATURES • 4.5A , 500V, RDS(ON)=1.5Ω@VGS=10V, ID=2.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1D G 3S 12D G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION 1 TYPE PJP830 PJF830 MARKING P830 F830 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA PJP830 500 +30 4 .5 18 87 0 .7 PJF830 Uni ts V V 4 .5 18 44 0 .3 5 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 310 1 .4 3 6 2 .5 2 .8 2 100 O C Avalanche Energy with Single Pulse IAS=4.5A, VDD=82V, L=26.5mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JAN.08.2010 PAGE . 1 PJP830 / PJF830 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 2.5A VDS=500V, VGS=0V V GS =+ 3 0 V, V D S =0 V 500 2 .0 - 1.3 - 4 .0 1.5 10 +100 V V Ω uA nΑ Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd t d (o n) tr t d (o ff) tf C C C i ss - 1 8 .6 3 .6 8.4 12.8 16.4 3 6 .2 22 560 68 8.2 26 22 ns 56 32 980 150 12 pF nC V D S =4 0 0 V, ID =4 .5 A V GS =1 0 V - VDD=250V , I D =4.5A VGS=10V , RG=25Ω - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS =4 .5 A , V GS =0 V V GS =0 V, IF = 4 .5 A d i /d t=1 0 0 A /us - 250 2 .2 4 .5 18 1 .5 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. STAD-JAN.08.2010 PAGE . 2 PJP830 / PJF830 PJP830 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) 10 9 8 7 6 5 4 3 2 1 0 0 5 ID - Drain-to-Source Current (A) ID - Drain Source Current (A) VGS= 20V~ 7.0V VDS =50V 6.0V 10 TJ = 125oC 25oC -55oC 5.0V 1 0.1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric Fig.2 Transfer Characteristric 2.4 RDS(ON) - On Resistance(Ω ) RDS(ON) - On Resistance(Ω ) 2.2 2 2 ID =2.5A 1.8 1.6 1.4 1.2 1 TJ =25oC 1.8 1.6 1.4 1.2 1 0 2 4 6 8 ID - Drain Current (A) 10 VGS=10V VGS = 20V 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.9 2.5 2.1 1.7 1.3 0.9 0.5 -50 -25 0 25 50 75 100 125 150 1000 C - Capacitance (pF) VGS =10 V ID =2.5A 800 Ciss 600 400 200 Crss 0 f = 1MHz VGS = 0V Coss 0 TJ - Junction Temperature (oC) 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature STAD-JAN.08.2010 Fig.6 Capacitance PAGE. 3 PJP830 / PJF830 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 4 8 12 16 Qg - Gate Charge (nC) 20 100 VDS=400V VDS=250V VDS=100V IS - Source Current (A) ID =4.5A VGS = 0V 10 TJ = 125oC 25oC 0.1 -55oC 1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-JAN.08.2010 PAGE. 4 PJP830 / PJF830 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JAN.08.2010 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br