PJP8N60

PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP8N60 PJF8N60 MARKING P8N60 F8N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e G a te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 8 N6 0 600 +30 8 32 125 1 .0 P J F 8 N6 0 Uni ts V V 8 32 45 0 .3 9 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 500 1 6 2 .5 2 .7 8 100 O C Avalanche Energy with Single Pulse IAS=8.0A, VDD=50V, L=15.6mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE May 10,2010-REV.01 PAGE . 1 PJP8N60 / PJF8N60 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 4.0A VDS=600V, VGS=0V V GS =+ 3 0 V, V D S =0 V 600 2 .0 - 1.0 - 4 .0 1.2 10 +100 V V Ω uA nΑ Ga te Thre s ho ld Vo lta g e D r a i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e G a te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Tu rn-On D e la y Ti me Turn-On Ri s e Ti me Tu rn-Off D e la y Ti me Tu rn-Off F a ll Ti me In p ut C a p a c i ta nc e O utp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 2 2 .8 5 .6 7.6 13.2 18.4 4 6 .8 2 0 .8 11 6 5 108 10 18 32 ns 65 30 1480 160 18 pF nC V D S =4 8 0 V, ID = 8 A V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=300V,I D =8A VGS=10V, RG=25Ω - o ss V D S =2 5 V, V GS =0 V f= 1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS = 8 A , V GS =0 V V GS =0 V, IF = 8 A d i /d t=1 0 0 A /us - 350 3 .2 8 .0 32 1 .4 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%. May 10,2010-REV.01 PAGE . 2 PJP8N60 / PJF8N60 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) 14 12 10 8 6 4 2 0 0 VGS= 20V~ 6.0V ID - Drain Source Current (A) 16 100 VDS =50V 10 TJ = 125oC 25oC 0.1 -55oC 5.0V 1 0.01 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 8 Fig.1 Output Characteristric Fig.1 Fig.2 Transfer Characteristric RDS(ON) - On Resistance(Ω ) 3 RDS(ON) - On Resistance(Ω ) 4 ID =4.0A 3 2.5 2 1.5 1 VGS=10V VGS = 20V 2 TJ =25oC 1 0.5 0 0 0 4 8 12 16 ID - Drain Current (A) 20 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.8 2.4 2 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) VGS =10 V ID =4.0A 2000 f = 1MHz VGS = 0V C - Capacitance (pF) 1600 1200 Ciss 800 C C Coss C 400 0 Crss 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature May 10,2010-REV.01 Fig.6 Capacitance PAGE. 3 PJP8N60 / PJF8N60 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) 12 VGS - Gate-to-Source Voltage (V) 100 VDS=480V VDS=300V VDS=120V 10 8 6 4 2 0 0 5 IS - Source Current (A) ID =8A VGS = 0V 10 TJ = 125oC 1 -55oC 25oC 0.1 0.01 10 15 20 Qg - Gate Charge (nC) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 C) TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature May 10,2010-REV.01 PAGE. 4 PJP8N60 / PJF8N60 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. May 10,2010-REV.01 PAGE . 5