PJQ5450-AU_R2_000A1

G400P06S P-Channel Enhancement Mode Power MOSFET Description The G400P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested Schematic diagram -60V -6A < 40mΩ l RoHS Compliant Application l Power switch l DC/DC converters pin assignment SOP-8 Ordering Information Device Package Marking Packaging G400P06S SOP-8 G400P06 4000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -6 A IDM -24 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.7 W EAS 144 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 75 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598) G400P06S Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.5 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -12A -- 33 40 mΩ Forward Transconductance gFS VDS = -5V,ID = -12A -- 15 -- S -- 2506 -- -- 112 -- -- 110 -- -- 46 -- -- 10 -- -- 9 -- -- 10 -- -- 6 -- -- 44 -- -- 12 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -12A, VGS = -10V VDD = -30V, ID = -12A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -6 A Body Diode Voltage VSD TJ = 25ºC, ISD = -12A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 47 -- nC Reverse Recovery Time Trr -- 34 -- ns IF = -12A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598) G400P06S Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598) G400P06S Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 50 -7V 50 VDS= -5V -6V -5.5V 40 -ID, Drain Current (A) -ID, Drain Current (A) -10V Figure 2. Transfer Characteristics -5V 30 VGS= -4.5V 20 10 0 0 1 2 3 40 30 20 25℃ 10 0 4 0 -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 45 VGS= -10V 35 30 25 0 4 8 12 16 20 2000 1500 1000 0 Coss 10 20 30 40 50 4 2 0 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com 6 -Is, Reverse Drain Current (A) Capacitance(pF) Ciss 2500 0 8 Figure 6. Source-Drain Diode Forward 3500 Crss VDD = -30V ID = -12A Qg Gate Charge（nC） Figure 5. Capacitance 500 8 10 0 24 -ID-Drain Current (A) 3000 6 Figure 4. Gate Charge 50 20 4 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 40 2 TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1598) G400P06S Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V, ID = -12A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 75°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598) G400P06S SOP-8 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598)