PJQMS05

PJQMS05 SERIES QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Quad TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 4 data lines where the board space is a premium. 7 SPECIFICATION FEATURES 350W Power Dissipation (8x20µsec Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance New SMT package QFN 2mm x 2mm (Height 0.75mm) Compatible with the SOT363 footprint. 4 5 6 3 2 1 7 7 4 5 APPLICATIONS Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) Portable Instrumentation Mobile Phones and Accessories Memory Card Port Protection 6 3 2 1 QFN 2X2 Bottom View MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8x20µsec Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 350 >25 -50 to +125 -50 to +150 Units W kV °C °C ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJQMS05 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj Cj I BR = 1mA VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 5 Vdc Bias f = 1MHz Between I/O pins and pin 7 Conditions Min Typical Max 5 Units V V 6 5 9.8 13 225 125 µA V V pF pF 4/19/2005 Page 1 www.panjit.com PJQMS05 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJQMS12 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 12V I pp = 5A I pp = 15A 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 Conditions Min Typical Max 12 Units V V 13.3 1 20 25 100 µA V V pF PJQMS15 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 15V I pp = 5A I pp = 12A 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 Conditions Min Typical Max 15 Units V V 16.7 1 24 29 80 µA V V pF PJQMS24 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 24V I pp = 5A I pp = 8A 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 Conditions Min Typical Max 24 Units V V 26.7 1 40 44 60 µA V V pF 4/19/2005 Page 2 www.panjit.com PJQMS05 SERIES TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Surge Pulse Waveform Definition N on-R epetitive Peak Pulse Power vs Pulse Time Pulse Waveform Peak Pulse Power - Ppp (W) 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 100 10 1 0.1 0.01 1 10 100 1000 Pulse D uration, µsec Percent of Ipp 50% of Ipp @ 20µs Rise time 10-90% - 8µs 5 10 15 tim e, µsec 20 25 30 Clamping Voltage vs. Peak current 45 40 35 30 25 20 15 10 5 0 0 5 Off-State Capacitance per Device - 1MHz 200 180 160 140 120 100 80 60 40 20 0 0 Clamping voltage, V PJS 24 MS PJQMS24 PJQMS05 PJSMS05 PJS 15 MS PJQMS15 PJS 12 MS PJQMS12 PJQMS05 PJS 05 MS Capacitance, pF PJQMS12 PJSMS1 2 PJQMS15 PJSMS1 5 PJQMS24 PJSMS24 10 15 20 25 30 1 2 3 4 5 Ipp, A (8/20µsec) Bias, Vdc 4/19/2005 Page 3 www.panjit.com PJSMS05 SERIES TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS (in mm) 4 7 7 5 6 3 4 5 3 2 1 2 SUGGESTED PAD LAYOUT 6 1 7 I/O Data Line 1 I/O Data Line 2 I/O Data Line 3 I/O Data Line 4 Note: pin 2 and pin 7 could be fused with the pin 7 in order to make ground connection to these pins. 0.35 ± 0.05 mm 2.0 ± 0.05mm 0.25 ± 0.05mm 0.65mm 0.8 ± 0.05 mm 0.75 ± 0.025 mm 0.203 ± 0.025 mm 4/19/2005 Page 4 www.panjit.com 1.550mm Ref. 1.4 ± 0.05mm 2.0 ± 0.05 mm