PJSD03TS

PJSD03TS~PJSD36TS SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 120 Watts peak pules power( tp=8/20μs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage current • In compliance with EU RoHS 2002/95/EC directives 3~36 Volts POWER 120 Watts APPLICATIONS • Case: SOD-523 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx Weight: 0.0014 grams • Marking : PJSD03TS : KD PJSD05TS : KE PJSD07TS : KF PJSD08TS : KR PJSD12TS : LE PJSD15TS : LM PJSD24TS : LZ PJSD36TS : MP 1 2 Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power Dissipation (tp=8/20 μs) ESD Voltage Operating Temperature Storage Temperature Symbol PPP V ESD TJ TSTG Value 120 25 -50 to +150 -50 to +150 Units W KV O C C O ELECTRICALCHATACTERISTICS PJSD03TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA V R=3.3V I PP=5A 0Vdc Bias=f=1MHz 3.3Vdc Bias=f=1MHz Min. 4 Typical Max. 3.3 200 6.5 200 100 Units V V μA V pF pF July 20.2010-REV.00 PAGE . 1 PJSD03TS~PJSD36TS PJSD05TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=5V I PP=5A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6.0 Typical Max. 5 5 9 110 60 Units V V μA V pF pF PJSD07TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ Conditions I BR=1mA VR=7V I PP=8.8A 0Vdc Bias=f=1MHz Min. 7.5 Typical Max. 7.0 150 22.7 85 Units V V nA V pF PJSD08TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol V RWM VBR IR VC CJ Conditions I BR=1mA VR=8V I PP=5A 0Vdc Bias=f=1MHz Min. 8.5 Typical Max. 8 5 13 70 Units V V μA V pF PJSD12TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ Conditions I BR=1mA VR=12V I PP=5A 0Vdc Bias=f=1MHz Min. 13.3 Typical Max. 12 5 17 60 Units V V μA V pF July 20.2010-REV.00 PAGE . 2 PJSD03TS~PJSD36TS PJSD15TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ Conditions I BR=1mA VR=15V I PP=5A 0Vdc Bias=f=1MHz Min. 16.6 Typical Max. 15 5 22 50 Units V V μA V pF PJSD24TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol V RWM VBR IR VC CJ Conditions I BR=1mA VR=24V I PP=3A 0Vdc Bias=f=1MHz Min. 26.7 Typical Max. 24 5 32 25 Units V V μA V pF PJSD36TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ Conditions I BR=1mA VR=36V I PP=1A 0Vdc Bias=f=1MHz Min. 40 Typical Max. 36 5 55 20 Units V V μA V pF July 20.2010-REV.00 PAGE . 3 PJSD03TS~PJSD36TS I PP-Peak Pulse Current-% of I PP 120 tf 100 80 e 60 40 20 0 0 5 10 t d=t I PP/2 -t 100 Peak Value I PP TEST m m %Of Rated Power WAVEFORM PARAMETERS 80 60 40 20 0 Peak Pulse Power 8/20 m s Average Power 0 25 50 75 100 125 150 O 15 T-Time- m s 20 25 30 T L-Lead Temperature- C FIG. 2-Power Derating Curve FIG. 1- Pulse Wave Form P PP-Peak Pulse Current-Watts 10000 1000 100 10 0.01 1 10 100 1000 10000 t d-Pulse Duration- m s FIG. 3-Peak Pulse Power vs Pulse Time July 20.2010-REV.00 PAGE . 4 PJSD03TS~PJSD36TS MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 5K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. July 20.2010-REV.00 PAGE . 5