PJSD05LFN2

PJSD05LFN2 ESD PROTECTION DIODES FEATURES • IEC61000-4-2 Level 4 ESD Protection 0.026(0.65) 0.021(0.55) 0.042(1.05) 0.037(0.95) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: DFN 2L, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 0.022(0.55) 0.017(0.45) • Polarity : see cathode band 0.002(0.05)MAX. 0.013(0.32) 0.008(0.22) 1 Cathode 2 Anode PIN NO.1 IDENTIFICATION MAXIMUM RATINGS Rating To ta l P o we r D i s s i p a t i o n o n F R-4 B o a rd ( No te 1 )@ T A = 2 5 o C P e a k P o we r D i s s i p a ti o n 8 /2 0 S ur g e P uls e The r ma l Re s i s ta nc e J unc t i o n t o A mb i e nt L e a d S o ld e r Te m p e ra t ure - Ma xi m um ( 1 0 S e c o nd D ur a ti o n) O p e r a ti ng J unc t i o n a nd S t o ra g e Te m p e ra t ure Ra ng e Symbol PD P PM R θJ A TL T J , T S TG Value 250 40 500 260 -55 to +150 0.022(0.55) 0.047(0.45) Units mW W o C/W o C C o Stresses exceeding Maximum Ratings may damage the device. Maximum Rating are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Note : 1.FR-4 = 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE November 29,2010-REV.00 PAGE . 1 PJSD05LFN2 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Parameter Maximum Reverse Peak Pulse Current Clamping Voltage@I PP Working Peak Reverse Voltage Maximum Reverse Leakage Current@VRWM Breakdown Voltage @ I T Test Current Forward Current Forward Voltage@I F Maximum Peak Power Dissipation Max.Capacitance@V R=0 and f=1MHz Symbol I PP VC VRWM IR VBR IT IF VF PPM C ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) V BR@I T (Note 2) Mi n. V 6.2 C (Note 3) M a x. pF 35 V RWM Part Number Ma x. V PJSD05LFN2 5 I R @V RWM Ma x. μA 1 VC I Ma x P e r 8 /2 0 μ s V 9.8 A 4 mA 1.0 BC PP IT Marking Note : 2.VBR is measured with a pulse test current IT at an ambient temperature of 25oC 3.Capacitance at f=1MHz, VR=0V, TA=25oC November 29,2010-REV.00 PAGE . 2 PJSD05LFN2 110 100 90 80 V C, Clamping Voltage (V) 10 8 6 4 2 0 Percent of Ipp 70 60 50 40 30 20 10 0 0 Rise time 10-90% - 8 m s 10 15 20 50% of Ipp @20 m s 25 30 0 1 2 3 4 5 time , m sec I PP,8/20 m s Peak Pulse Current (A) Fig.1 8/20µs Peak Pulse Current Waveform Fig.2 Typical Peak Clamping Voltage C J ,Junction Capacitance (pF) 40 60 I R, Leakage Current (nA) 30 50 40 30 20 10 0 0 1 2 3 T J = 25 C 20 10 0 0 1 2 3 4 5 4 5 V R ,Reverse Bias Voltage (V) V R, Reverse Voltage (V) Fig.3 Typical Junction Capacitance Fig.4 Typical Reverse Characteristics I F, Forward Current (mA) 1000 300 P D, Steady-State Power Dissipation(mW) TJ =150 C 100 TJ =125 C 10 TJ =75 C 1 0. 4 0. 6 0. 8 1 1. 2 TJ =25 C 250 200 150 100 50 0 0 25 50 75 100 125 150 V F, Forward Voltage (V) T A, Ambient Temperature (°C) Fig.5 Typical Forward Characteristics Fig.6 Power Derating Curve November 29,2010-REV.00 PAGE . 3 PJSD05LFN2 MOUNTING PAD LAYOUT DFN 2L 0.043 (1.10) 0.017 (0.42) 0.010 (0.26) 0.028 (0.70) 0.027 (0.68) ORDER INFORMATION • Packing information T/R - 8K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. November 29,2010-REV.00 PAGE . 4