PJSD08TG

PJSD03TG~PJSD36TG SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 100 Watts peak pules power( tp=8/20µs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage current • In compliance with EU RoHS 2002/95/EC directives 3~36 Volts POWER 100 Watts APPLICATIONS • Case: SOD-723 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx.Weight : 0.00077 gram • Marking : PJSD03TG : FS PJSD05TG : FT PJSD08TG : FU PJSD12TG : FV PJSD15TG : FW PJSD24TG : FX PJSD36TG : FY MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature ELECTRICAL CHARA CTERISTICS Symbol Value 100 25 -50OC to 150 OC -50OC to 150 OC Units W KV O P PK V ESD TJ TSTG C C O PJSD03TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM V BR IR VC CJ CJ Conditions IBR=1mA VR=3.3V IPP=1A 0Vdc Bias=f=1MHz 3Vdc Bias=f=1MHz Min. 4 Typical 180 100 Max. 3.3 125 7 Units V V µA V pF pF STAD-MAY.18.2007 PAGE . 1 PJSD03TG~PJSD36TG PJSD05TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =5V IP P =8.5 A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6 Typical 65 Max. 5 10 Units V V µA V pF pF 9.8 110 - PJSD08TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =8V IP P =7.5 A 0Vdc Bias=f=1MHz 8Vdc Bias=f=1MHz Min. 8.5 Typical Max. 8 10 13.4 Units V V µA V pF pF 40 70 - PJSD12TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =12V IP P =6.7 A 0Vdc Bias=f=1MHz 12Vdc Bias=f=1MHz Min. 13.3 Typical 30 Max. 12 1 20 46 Units V V µA V pF pF - PJSD15TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =15V IP P =6A 0Vdc Bias=f=1MHz 15Vdc Bias=f=1MHz Min. 16.7 Typical Max. 15 1 24 Units V V µA V pF pF 20 35 - STAD-MAY.18.2007 PAGE . 2 PJSD03TG~PJSD36TG PJSD24TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =24V IP P =4.5A 0Vdc Bias=f=1MHz 24Vdc Bias=f=1MHz Min. 26.7 Typical Max. 24 1 Units V V µA V pF pF 14 43 25 - PJSD36TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =36V IP P =3A 0Vdc Bias=f=1MHz 36Vdc Bias=f=1MHz Min. 40 Typical - Max. 36 1 52 18 Units V V µA V p pF 12 - PJSD03TG PJ : Panjit SD : Singal direction 03 : Voltage TG : Package SOD-7 23 STAD-MAY.18.2007 PAGE . 3 PJSD03TG~PJSD36TG I PP-Peak Pulse Current-% of I PP 120 100 tf 100 80 Peak Value I PP TEST m %Of Rated Power WAVEFORM PARAMETERS -t 80 60 40 20 0 Peak Pulse Power 8/20 m s e 60 40 20 0 0 5 10 m t d=t I PP/2 Average Power 0 25 50 75 100 125 150 15 T-Time- m s 20 25 30 T L-Lead Temperature- OC FIG. 2-Power Derating Curve FIG. 1- Pulse Wave Form P PP-Peak Pulse Current-Watts 10000 1000 100 320W,8/20 m s Waveform 10 0.01 1 10 100 1000 10000 t d-Pulse Duration- m s FIG. 3-Peak Pulse Power vs Pulse Time 400 C-Ca pacit ance -pF 300 200 100 0 0 1 2 3 4 5 6 V R=Reverse Voltage-Volts FIG. 4-Typical Reverse Voltage vs Capacitance STAD-MAY.18.2007 PAGE . 4 PJSD03TG~PJSD36TG MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-APR.26.2007 PAGE . 5