PJSD12W

PJSD12W

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJSD12W - SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
PJSD12W 数据手册
PJSD03W~PJSD36W SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 350 Watts peak pules power( tp=8/20μs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage current • In compliance with EU RoHS 2002/95/EC directives 3~36 Volts POWER 350 Watts APPLICATIONS • Case: SOD-323 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Polarity : Color band cathode • Apporx. Weight: 0.0001 ounce, 0.0041 gram 1 2 Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 μs) ESD Voltage Operating Temperature Storage Temperature Symbol PPK VESD TJ TSTG Value 350 25 -50 to 150 -50 to 150 Units W KV O C C O August 12.2010-Rev.00 PAGE . 1 PJSD03W~PJSD36W PJSD03W Marking 03W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD05W Marking 05W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD08W Marking 08W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD12W Marking 12W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=12V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 13.3 Typical 130 50 Max. 12 15 1 19 Units V V μA V pF pF Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=3.0V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 4 - Typical 450 150 Max. 3.0 5.0 125 6.5 - Units V V μA V pF pF Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=5V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6 - Typical 300 100 Max. 5 7.2 10 9.8 - Units V V μA V pF pF Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=8V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 8.5 - Typical 150 80 Max. 8 10 10 13.4 - Units V V μA V pF pF August 12.2010-Rev.00 PAGE . 2 PJSD03W~PJSD36W PJSD15W Marking 15W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD24W Marking 24W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD36W Marking 36W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=36V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 39.9 Typical 30 1 Max. 36 45 1 60 Units V V μA V pF pF Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=24V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 26.6 Typical 80 10 Max. 24 30 1 43 Units V V μA V pF pF Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=15V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 16.7 Typical 120 30 Max. 15 20 1 24 Units V V μA V pF pF August 12.2010-Rev.00 PAGE . 3 PJSD03W~PJSD36W I PP-Peak Pulse Current-% of I PP 120 tf 100 80 e -t 60 40 20 0 0 5 10 t d=t I PP/2 Peak Value I PP TEST t f = 8 ms t d = 2 0 ms 100 WAVEFORM PARAMETERS %Of Rated Power 80 60 40 20 0 Peak Pulse Power 8/20 m s Average Power 0 25 50 75 100 125 150 15 T-Time- m s 20 25 30 T L-Lead Temperature- OC FIG. 2-Power Derating Curve FIG. 1- Pulse Wave Form P PP-Peak Pulse Current-Watts 10000 1000 100 320W,8/20 m s Waveform 10 0.01 1 10 100 1000 10000 t d-Pulse Duration- m s FIG. 3-Peak Pulse Power vs Pulse Time 400 C-Ca pacit ance -pF 300 200 100 0 0 1 2 3 4 5 6 V R=Reverse Voltage-Volts FIG. 4-Typical Reverse Voltage vs Capacitance August 12.2010-Rev.00 PAGE . 4 PJSD03W~PJSD36W MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 5K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. August 12.2010-Rev.00 PAGE . 5
PJSD12W
### 物料型号 - PJSD03W至PJSD36W:这些是不同功率等级的单线TVS二极管,用于ESD保护。

### 器件简介 - 这些TVS二极管能够承受高达350瓦特的峰值脉冲功率(8/20μs),适用于便携式电子产品,并且可以作为MLV(多层陶瓷电容器)在ESD保护应用中的替代品。

### 引脚分配 - 器件采用SOD-323塑料封装,具有可焊性端子,符合MIL-STD-750, Method 2026标准,阴极带有色环以指示极性。

### 参数特性 - 最大额定值和电气特性: - 峰值脉冲功率(tp=8/20μs):350W - ESD电压:25kV - 工作温度范围:-50至150°C - 存储温度范围:-50至150°C - 不同型号的具体参数: - 包括反向立起电压、反向击穿电压、反向漏电流、钳位电压和关态结电容等。

### 功能详解 - 这些TVS二极管具有低钳位电压和漏电流,符合欧盟RoHS指令,主要用于保护电子设备免受ESD(静电放电)损害。

### 应用信息 - 用于便携式电子产品的ESD保护,具有较小的封装尺寸,适合在空间受限的应用中使用。

### 封装信息 - 器件采用SOD-323塑料封装,重量约为0.0001盎司或0.0041克。
PJSD12W 价格&库存

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