PJSD36CW

PJSD36CW

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJSD36CW - Single Line TVS Diode for ESD Protection in Portable Electronics - Pan Jit International ...

  • 详情介绍
  • 数据手册
  • 价格&库存
PJSD36CW 数据手册
PJSD05CW SERIES Single Line TVS Diode for ESD Protection in Portable Electronics VOLTAGE 5 to 36 Volts POWER 350 Watts SOD-323 Unit: inch (mm) FEATURES • Transient protection for data lines to .054(1.35) .045(1.15) IEC 61000-4-2 (ESD) + 1 5kV (air),+ 8kV (contact) IEC 61000-4-5 (Lightning) 24A (8/20µs) • Small package for use in portable electronics • Suitable replacement for MLV’s in ESD protection applications .078(1.95) .068(1.75) .014(.35) .009(.25) .006(.15) • Low clamping voltage • Solid-state silicon avalanche technolngy • In compliance with EU RoHS 2002/95/EC directives .107(2.7) .090(2.3) MECHANICAL DATA Case : SOD-323, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0041 grams Marking Code : P J S D 0 5 C W = E ZB P J S D 1 5 C W = E ZE P J S D 0 8 C W = E ZC P J S D 2 4 C W = E ZF P J S D 1 2 C W = E ZD P J S D 3 6 C W = E ZG .012(.30)MIN. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak Pulse Power (tP=8/20 µs) Lead Soldering Temperature Operating Temperature Storage Temperature SYMBOL PPK TL TJ TSTG VALUE 350 260(10 sec.) -55 to +125 -55 to +150 UNITS Watts o .002(.05) • Protects one I/O or power line .038(.95) .027(.70) C C C o o 1 2 Fig.130 REV.0.2-APR.2.2009 PAGE . 1 PJSD05CW SERIES ELECTRICAL CHARACTERISTICS P JS D 0 5 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 1 2 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 1 5 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 2 4 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 3 6 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance Symbol VRWM V BR IR VC VC CJ Conditions I t=1mA VRWM=36V, T=25 C I PP=1A, t p=8/20µs I PP=3A, t p=8/20µs VR=0V, f=1MHz o Symbol VRWM V BR IR VC VC CJ Conditions I t=1mA VRWM=5V, T=25 C I PP=5A, t p=8/20µs I PP=24A, t p=8/20µs VR=0V, f=1MHz o Min. 6.37 - Typical - Max. 5 7.04 5 9.8 14.5 200 Units V V µA V V pF Symbol VRWM V BR IR VC VC CJ Conditions I t=1mA VRWM=12V, T=25oC I PP=5A, t p=8/20µs I PP=15A, t p=8/20µs VR=0V, f=1MHz Min. 13.3 - Typical - Max. 12 14.7 1 19 24 100 Units V V µA V V pF Symbol VRWM V BR IR VC VC CJ Conditions I t=1mA VRWM=15V, T=25oC I PP=5A, t p=8/20µs I PP=10A, t p=8/20µs VR=0V, f=1MHz Min. 16.72 - Typical - Max. 15 18.48 1 24 29 75 Units V V µA V V pF Symbol VRWM V BR IR VC VC CJ Conditions I t=1mA VRWM=24V, T=25 C I PP=1A, t p=8/20µs I PP=4A, t p=8/20µs VR=0V, f=1MHz o Min. 26.6 - Typical - Max. 24 29.4 1 36 42 50 Units V V µA V V pF Min. 40.57 - Typical - Max. 36 44.84 1 58 71 45 Units V V µA V V pF REV.0.2-APR.2.2009 PAGE . 2 PJSD05CW SERIES Peak Pulse Power-P PK(kW) 10 110 100 90 80 70 60 50 40 30 20 10 0 % of Rate d Pow er or I PP 1 0.1 0.01 0.1 1 10 100 1000 0 25 Pulse Duration-t P( m s) 75 100 125 o Ambient Temperature-T A( C) 50 150 FIG.1 Non-Repetitive Peak Pulse Power vs. Pulse Time 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 80 Clamping Voltage-V C (V) FIG.2 Power Derating Curve Waveform Parameters tr=8 m s,td=20 m s 70 60 50 40 30 20 15 10 5 0 Percen t of I PP Waveform Parameters tr=8 m s,td=20 m s PJSD05CW e -t td=Ipp/2 15 20 25 30 Time( m s) FIG.3 Pulse Waveform 80 70 Clamping Voltage-V C (V) 0 5 10 15 20 25 30 Peak Pulse Curent-I PP(A) FIG.4 Clamping Voltage vs. Peak Pulse Current 60 50 40 30 20 15 10 5 0 Waveform Parameters tr=8 m s,td=20 m s PJSD36CW 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 Peak Pulse Curent-I PP(A) FIG.5 Clamping Voltage vs. Peak Pulse Current REV.0.2-APR.2.2009 PAGE . 3 PJSD05CW SERIES MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 5K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.2-APR.2.2009 PAGE . 4
PJSD36CW
### 物料型号 - PJSD05CW=EZB - PJSD08CW=EZC - PJSD12CW=EZD - PJSD15CW-EZE - PJSD24CW-EZF - PJSD36CW-EZG

### 器件简介 PJSD05CW系列是一种用于便携式电子产品中ESD保护的单线TVS二极管,工作电压范围为5至36伏特,能够承受高达350瓦特的功率。该系列器件采用SOD-323封装,适合用于保护一个I/O或电源线路。

### 引脚分配 PJSD05CW系列采用SOD-323封装,这是一种小型表面贴装封装,具有两个引脚,一个用于阳极(Anode),另一个用于阴极(Cathode)。

### 参数特性 - 峰值脉冲功率(tp=8/20 us):350瓦特 - 焊接温度:260°C(10秒) - 工作温度:-55至+125°C - 存储温度:-55至+150°C

### 功能详解 PJSD05CW系列TVS二极管提供以下保护特性: - 针对数据线的瞬态保护,符合IEC 61000-4-2(ESD)标准,空气放电15kV,接触放电8kV。 - 符合IEC 61000-4-5(闪电)标准,24A(8/20μs)。 - 小型封装,适用于便携式电子产品。 - 可用作MLV(金属氧化物压敏电阻)在ESD保护应用中的替代品。 - 低钳位电压。 - 采用固态硅雪崩技术。 - 符合欧盟RoHS 2002/95/EC指令。

### 应用信息 PJSD05CW系列适用于需要ESD保护的便携式电子产品,如智能手机、平板电脑、笔记本电脑等。

### 封装信息 PJSD05CW系列采用SOD-323塑料封装,这种封装尺寸小,适合表面贴装技术。封装的标记代码如上所述,每个型号都有独特的标记以便于识别。
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