PJSD36TG

PJSD36TG

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJSD36TG - SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS - Pan Jit International Inc...

  • 详情介绍
  • 数据手册
  • 价格&库存
PJSD36TG 数据手册
PJSD03TG~PJSD36TG SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 100 Watts peak pules power( tp=8/20µs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage current • In compliance with EU RoHS 2002/95/EC directives 3~36 Volts POWER 100 Watts APPLICATIONS • Case: SOD-723 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx.Weight : 0.00077 gram • Marking : PJSD03TG : FS PJSD05TG : FT PJSD08TG : FU PJSD12TG : FV PJSD15TG : FW PJSD24TG : FX PJSD36TG : FY MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature ELECTRICAL CHARA CTERISTICS Symbol Value 100 25 -50 to 150 -50 to 150 Units W KV O P PK V ESD TJ TSTG C C O PJSD03TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM V BR IR VC CJ CJ Conditions IBR=1mA VR=3.3V IPP=10A 0Vdc Bias=f=1MHz 3Vdc Bias=f=1MHz Min. 4 Typical 180 100 Max. 3.3 125 7.5 Units V V µA V pF pF REV.0.1-FEB.16.2009 PAGE . 1 PJSD03TG~PJSD36TG PJSD05TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =5V IP P =8.5 A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6 Typical 65 Max. 5 10 Units V V µA V pF pF 9.8 110 - PJSD08TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =8V IP P =7.5 A 0Vdc Bias=f=1MHz 8Vdc Bias=f=1MHz Min. 8.5 Typical Max. 8 10 13.4 Units V V µA V pF pF 40 70 - PJSD12TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =12V IP P =6.7 A 0Vdc Bias=f=1MHz 12Vdc Bias=f=1MHz Min. 13.3 Typical 30 Max. 12 1 20 46 Units V V µA V pF pF - PJSD15TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =15V IP P =6A 0Vdc Bias=f=1MHz 15Vdc Bias=f=1MHz Min. 16.7 Typical Max. 15 1 24 Units V V µA V pF pF 20 35 - REV.0.1-FEB.16.2009 PAGE . 2 PJSD03TG~PJSD36TG PJSD24TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =24V IP P =4.5A 0Vdc Bias=f=1MHz 24Vdc Bias=f=1MHz Min. 26.7 Typical Max. 24 1 Units V V µA V pF pF 14 43 25 - PJSD36TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1mA VR =36V IP P =3A 0Vdc Bias=f=1MHz 36Vdc Bias=f=1MHz Min. 40 Typical - Max. 36 1 52 18 Units V V µA V p pF 12 - PJSD03TG PJ : Panjit SD : Singal direction 03 : Voltage TG : Package SOD-7 23 REV.0.1-FEB.16.2009 PAGE . 3 PJSD03TG~PJSD36TG I PP-Peak Pulse Current-% of I PP 120 tf Peak Value I PP TEST m 100 WAVEFORM PARAMETERS -t 80 e %Of Rated Power 100 80 60 40 20 0 Peak Pulse Power 8/20 m s m 60 40 20 0 0 5 10 t d=t I PP/2 Average Power 0 25 50 75 100 125 150 15 T-Time- m s 20 25 30 T L-Lead Temperature- OC FIG. 2-Power Derating Curve FIG. 1- Pulse Wave Form P PP-Peak Pulse Current-Watts 10000 1000 100 10 0.01 1 10 100 1000 10000 t d-Pulse Duration- m s FIG. 3-Peak Pulse Power vs Pulse Time 400 C-Ca pacit ance -pF 300 200 100 0 0 1 2 3 4 5 6 V R=Reverse Voltage-Volts FIG. 4-Typical Reverse Voltage vs Capacitance REV.0.1-FEB.16.2009 PAGE . 4 PJSD03TG~PJSD36TG MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-FEB.16.2009 PAGE . 5
PJSD36TG
1. 物料型号: - PJSD03TG~PJSD36TG:表示这是一个系列型号,电压等级从3V到36V不等。

2. 器件简介: - 这些是单线TVS二极管,用于ESD保护,适用于便携式电子产品。它们可以提供100瓦的峰值脉冲功率,并且具有小尺寸封装。

3. 引脚分配: - 器件采用SOD-723塑料封装,具有可焊性端子,符合MIL-STD-750, Method 2026标准。

4. 参数特性: - 包括反向 standoff 电压、反向击穿电压、反向漏电流、钳位电压和关态结电容等参数,具体数值依据不同的电压等级有所不同。

5. 功能详解: - 这些TVS二极管主要用于保护电子设备免受ESD(静电放电)损害,具有低钳位电压和漏电流,符合欧盟RoHS指令。

6. 应用信息: - 适用于便携式电子产品的ESD保护,可以作为MLV(金属氧化物压敏电阻)的替代品。

7. 封装信息: - 采用SOD-723封装,重量轻,体积小,便于在便携式设备中使用。
PJSD36TG 价格&库存

很抱歉,暂时无法提供与“PJSD36TG”相匹配的价格&库存,您可以联系我们找货

免费人工找货