PJSDA05C-4

PJSDA05C-4

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJSDA05C-4 - TVS ARRAY QUAD FOR ESD PROTECTION - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
PJSDA05C-4 数据手册
P JSDA05C-4 TVS ARRAY QUAD FOR ESD PROTECTION This Penta TVS Array has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below. This TVS array offers an integrated solution to protect up to 4 data lines where the board space is a premium. FEATURES • • • • • 80W power dissipation (8/20 μs waveform) Low leakage current,maximum of 1μA@5Vdc Very low clamping voltage IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance In compliance with EU RoHS 2002/95/EC directives 12 30 1 2 3 Fig.126 MAXIMUM RATINGS Parameter P e a k P uls e P o we r ( 8 /2 0 μ s Wa ve f o rm) P e a k P uls e C ur re nt ( 8 /2 0 μ s Wa ve fo r m) E S D Vo lt a g e (HB M ) O p e r a ti ng Te m p e ra t ure Ra ng e S t o ra g e Te m p e ra t ur e Ra ng e Symbol P PP I PP Value 80 5.0 >25 -55 to + 150 -55 to + 150 MAX. 035 0.9 • Case: SOT23-6L molded plastic • Terminals:Solder plated, solderable per MIL-STD-750,Method 2026 • Weight: 0.0005 ounce, 0.0141 gram 5 6 • Marking : QCG 4 119 MECHANICAL DATA Units W A kV o V ESD TJ T S TG C C o ELECTRICAL CHARACTERISTICS TJ=25oC Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20μs) Clamping Voltage (8/20μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC VC CJ CJ I BR=1mA VR=5V I PP=1A I PP=4A 0Vdc Bias f=1MHz Between I/O pins and pin 2 5Vdc Bias f=1MHz Between I/O pins and pin 2 Conditions Min. 6.2 Typ. 15 7 Max. 5.0 8.0 1 12 15 17 10 Units V V μA V V pF pF April 30.2010-REV.00 PAGE . 1 P JSDA05C-4 100 90 80 25 50% of I pp@20 m s CJ, Junction Capacitance (pF) 20 15 10 5 0 0 1 2 3 4 5 Perc ent of I pp 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 Rise time 10-90%-8 m s time, m s FIG 1-PULSE WAVEFORM VR, Reverse Bias Voltage (V) FIG 2- TYPICAL JUNCTION CAPACITANCE UNDER BIAS IPP, Peak Current (A) ,8/20 m sec 100 6 5 4 3 2 1 0 8 9 10 11 12 IR, Reverse Leakage Current (nA) 10 1 0 20 40 60 80 100 120 o 140 160 T J , Junction Temperature ( C) VC , Clamping Voltage(V) FIG 3- TYPICAL LEAKAGE CURRENT vs JUNCTION TEMPERATURE FIG 4- CLAMPING VOLTAGE vs PEAK CURRENT April 30.2010-REV.00 PAGE . 2 PJSDA05C-4 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. April 30.2010-REV.00 PAGE . 3
PJSDA05C-4 价格&库存

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