PJSMDA12-6

PJSMDA05-6 SERIES HEX TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This 6 TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 6 data lines where the board space is a premium. P SPECIFICATION FEATURES 1 8 7 GND 6 GND 5 SOIC-8 350W Power Dissipation (8x20µsec Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance Packaged in the Industry Standard SOIC-8 2 3 4 APPLICATIONS RS-232C or RS-422 Communication ports GPIB/IEEE 485 Ports Portable Instrumentation 8 5 4 1 MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8x20µsec Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 350 >25 -50 to +125 -50 to +150 Units W kV °C °C ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA05-6 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj Cj I BR = 1mA VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 5 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 Conditions Min Typical Max 5 Units V V 6 5 9.8 13 225 125 µA V V pF pF 4/19/2005 Page 1 www.panjit.com PJSMDA05-6 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA12-6 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 12V I pp = 5A I pp = 15A 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 Conditions Min Typical Max 12 Units V V P 13.3 5 20 25 100 µA V V pF PJSMDA15-6 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 15V I pp = 5A I pp = 12A 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 Conditions Min Typical Max 15 Units V V 16.7 5 24 29 80 µA V V pF PJSMDA24-6 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 24V I pp = 5A I pp = 8A 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 Conditions Min Typical Max 24 Units V V 26.7 5 40 44 60 µA V V pF 4/19/2005 Page 2 www.panjit.com PJSMDA05-6 SERIES TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Surge Pulse Waveform Definition N on-R epetitive Peak Pulse Power vs Pulse Time Pulse Waveform Peak Pulse Power - Ppp (W) 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 100 10 1 0.1 0.01 1 10 100 1000 Pulse D uration, µsec Percent of Ipp 50% of Ipp @ 20µs Rise time 10-90% - 8µs 5 10 15 tim e, µsec 20 25 30 Clamping Voltage vs. Peak current Off-State Capacitance per Device - 1MHz PJSMDAxx-6 45 40 35 30 25 20 15 10 5 0 0 5 Clamping voltage, V 2 24 PJS 4 MS PJSMDAxx-6 200 180 160 140 120 100 80 60 40 20 0 0 05 PJSMS05 PJS15 MS 15 PJS12 MS 12 0 05 PJS 5 MS Capacitance, pF PJSMS1 2 12 15 5 PJSMS1 24 PJSMS24 10 15 20 25 30 1 2 3 4 5 Ipp, A (8/20µsec) Bias, Vdc 4/19/2005 Page 3 www.panjit.com PJSMDA05-6 SERIES TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS RS232 Pinout Pin Name RS232 V.24 1 2 3 4 5 6 7 8 9 CD RXD TXD DTR GND DSR RTS CTS RI CF BB BA CD AB CC CA CB CE 109 104 103 108.2 102 107 105 106 125 Dir Description Carrier Detect Receive Data Transmit Data Data Terminal Ready System Ground Data Set Ready Request to Send Clear to Send Ring Indicator Pin2 Pin3 Pin4 Pin6 Pin7 Pin8 GND Dimensions in inches 4/19/2005 Page 4 www.panjit.com