PJSMF05LC
5-TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This 5-TVS/Zener Array has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below. This TVS array offers an integrated solution to protect up to 5 data lines where the board space is a premium.
PRELIMINARY
SPECIFICATION FEATURES
100W Power Dissipation (8/20µs Waveform) Low Leakage Current, Maximum of 0.5µA @ 5Vdc Very Low Clamping Voltage, Max of 10V @ 9Apk 8/20µs IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance Max off state Capacitance of 90pF @ 0Vdc 1 MHz -Industry Standard Surface Mount Package SOT363 (SC70-6L)
6 5 4
1
APPLICATIONS
Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) Portable Instrumentation Mobile Phones and Accessories Memory Card Port Protection
1 2 3
SOT363
MAXIMUM RATINGS (Per Device)
Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp I pp V ESD TJ Tstg Value 100 10 >25 -55 to +150 -55 to + 150 Units W A kV °C °C
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj Cj I BR = 1 mA VR = 5V I pp = 5A I pp = 9A
0 Vdc Bias f = 1MHz Between I/O pins and pin 2 5 Vdc Bias f = 1MHz Between I/O pins and pin 2
Conditions
Min
Typical
Max 5
Units V V µA V V pF pF
6
7.2 0.5 9 10 90 45
2/13/2004
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PJSMF05LC
TYPICAL CHARACTERISTICS
25°C unless otherwise noted
Capacitance, pF
Ipp, Amps
Current, µA
PRELIMINARY
Non-Repetitive Peak Pulse Power vs Pulse Time 1000 Peak Pulse Power - Ppp (W)
Pulse Waveform 110 100 90 80 70 60 50 40 30 20 10 0 0
100
Percent of Ipp
50% of Ipp @ 20µs
R tim 10-90% - 8µs ise e
10 1 10 100 1000 Pulse Duration, µsec
5
10
15
20
25
30
time, µsec
Capacitance vs. Biasing Voltage @1MHz
Clamping Voltage vs Ipp 8x20µsec Surge 100 10 9 8 7 6 5 4 3 2 1 0 6 7 8 9 10 11 Clamping Voltage, V 90 80 70 60 50 40 30 0 1 2 3 4 5 Bias Voltage, Vdc
Typical Leakage Current vs Temperature
0.1000
0.0100 5V
0.0010 3V
0.0001 25 50 75 Temp,°C 100 125 150
2/13/2004
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PJSMF05LC
TYPICAL APPLICATION EXAMPLE
I/O1 I/O2
PRELIMINARY
I/O3 I/O4 I/O5
Ground (Pin 2)
PACKAGE LAYOUT DIMENSIONS
2/13/2004
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