PJSR05TB4

PJSR05TB4

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJSR05TB4 - LOW CAPACITANCE TVS AND DIODE ARRAY - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
PJSR05TB4 数据手册
PJSR05TB4 SERIES LOW CAPACITANCE TVS AND DIODE ARRAY This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Additionaly the TVS Device offers overvoltage transient protection between the operating voltage bus and ground plane. New package SOT-543 offers an ideal solution, minimizing board space in portable consumer appliactions. FEATURES • Peak power dissipation of 350W 8x20 μ s • Maximum capacitance of 1.2pF at 0Vdc 1MHz Line-to-Ground • Maximum leakage current of 1.0 μ A@VRWM • New SMT package SOT-543 • IEC61000-4-2 compliant 15kV Air, 8kV contact • In compliance with EU RoHS 2002/95/EC directives 4 MECHANICAL DATA • Case: SOT-543, Molded Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See circuit schematic below • Approx. Weight: 0.002 gram APPLICATIONS • USB 2.0 and Firewire Ports Protection • LAN / WLAN Access Point terminals • HDMI V1.3 Video Port Protection • DVI Port MAXIMUM RATINGS TJ=25oC unless otherwise noted PARAMETER Peak Pulse Power (8/20 μs Waveform) S o ld e r i ng Te m p e ra tur e , t m a x=1 0 s Op e r a ti ng J unc ti o n Te m p e r a tur e Ra ng e Storage Temperature Range SYMBOL PPPM TL TJ TSTG VALUE 350 260 -55 to + 125 -55 to + 150 UNIT W o C C O o C VREF 4 3 I/O1 GND1 REV.0.1-JAN.5.2010 2 I/O2 PAGE . 1 PJSR05TB4 SERIES ELECTRICAL CHARACTERISTICS(TJ=25oC) unless otherwise noted PJSR05TB4 Marking R5 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20 μs) Clamping Voltage (8/20 μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC VC CJ CJ I BR=1mA VR=5V I PP=1A I PP=5A 0 Vdc Bias f=1MHZ Between I/O pins and GND 0 Vdc Bias f=1MHz Between I/O pins Condition Min. 6.2 Typ. 0.9 0.5 Max. 5 1 9 12 1.2 0.6 Units V V μA V V pF pF PJSR12TB4 Marking R2 Parameter Symbol VRWM VBR IR VC VC CJ CJ I BR=1mA VR=12V I PP=1A I PP=5A 0 Vdc Bias f=1MHZ Between I/O pins and GND 0 Vdc Bias f=1MHz Between I/O pins Condition Min. 13.3 Typ. 0.9 0.5 Max. 12 1 18 22 1.2 0.6 Units V V μA V V pF pF Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20 μs) Clamping Voltage (8/20 μs) Off State Junction Capacitance Off State Junction Capacitance APPLICATION EXAMPLE USB2.0 Connector Vbus+ D+ DUSB Controller REV.0.1-JAN.5.2010 PAGE . 2 PJSR05TB4 SERIES MOUNTING PAD LAYOUT 4 0.038 (1.0) ORDER INFORMATION • Packing information T/R - 4K per 7" plastic Reel T/R - 10K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-JAN.5.2010 PAGE . 3
PJSR05TB4 价格&库存

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