PJX8601
Complementary Enhancement Mode MOSFET – ESD Protected
Voltage
20 / -20V
Current
SOT-563
0.5A / -0.5A
Unit: inch(mm)
Features
Low Voltage Drive (1.2V)
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case : SOT-563 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0026 grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
N-Ch LIMIT
P-Ch LIMIT
UNITS
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
+10
+10
V
Continuous Drain Current
ID
0.5
-0.5
A
Pulsed Drain Current(Note 4)
IDM
1.0
-1.0
A
Ta=25oC
Power Dissipation
Derate above 25oC
Operating Junction and Storage Temperature Range
300
mW
2.4
mW/ oC
TJ,TSTG
-55~150
oC
RθJA
417
oC/W
PD
Typical Thermal Resistance
-
Junction to Ambient(Note 3)
August 10,2022
PJX8601-REV.01
Page 1
PJX8601
N-Channel Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID= 250uA
20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID= 250uA
0.3
0.64
0.9
V
VGS= 4.5V, ID= 500mA
-
0.31
0.4
VGS= 2.5V, ID= 200mA
-
0.36
0.65
VGS= 1.8V, ID= 100mA
-
0.43
0.8
VGS= 1.5V, ID= 50mA
-
0.51
1.2
VGS= 1.2V, ID= 20mA
-
0.71
3.0
Drain-Source On-State Resistance
RDS(on)
Ω
Zero Gate Voltage Drain Current
IDSS
VDS= 16V, VGS=0V
-
-
1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V, VDS=0V
-
+0.5
+10
uA
-
1.4
-
-
0.22
-
-
0.21
-
-
67
-
-
19
-
-
6
-
-
2.8
-
-
20
-
-
23
-
-
23
-
-
-
500
mA
-
0.87
1.3
V
Dynamic(Note 5)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=10V, ID=500mA,
VGS=4.5V
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=150mA,
VGS=4V,
RG=10Ω(Note 1,2)
nC
pF
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
August 10,2022
IS
VSD
--IS= 500mA, VGS=0V
PJX8601-REV.01
Page 2
PJX8601
P-Channel Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=-250uA
-20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-0.3
-0.6
-1.0
V
VGS=-4.5V,ID=-500mA
-
0.9
1.2
VGS=-2.5V,ID=-200mA
-
1.07
1.5
VGS=-1.8V,ID=-100mA
-
1.25
2.2
VGS=-1.5V,ID=-40mA
-
1.42
3.6
VGS=-1.2V,ID=-10mA
-
1.7
6.0
Drain-Source On-State Resistance
RDS(on)
Ω
Zero Gate Voltage Drain Current
IDSS
VDS=-16V,VGS=0V
-
-
-1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V,VDS=0V
-
+2
+10
uA
-
1.4
-
-
0.19
-
-
0.2
-
-
38
-
-
15
-
-
9
-
-
7.2
-
-
21
-
-
85
-
-
116
-
-
-
-500
mA
-
-0.9
-1.3
V
Dynamic(Note 5)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=-10V, ID=-500mA,
VGS=-4.5V
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-500mA,
VGS=-4.5V,
RG=6Ω(Note 1,2)
nC
pF
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=-500mA, VGS=0V
NOTES :
1. Pulse width
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