PJX8601_R1_00001

PJX8601 Complementary Enhancement Mode MOSFET – ESD Protected Voltage 20 / -20V Current SOT-563 0.5A / -0.5A Unit: inch(mm) Features  Low Voltage Drive (1.2V)  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0026 grams Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL N-Ch LIMIT P-Ch LIMIT UNITS Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS +10 +10 V Continuous Drain Current ID 0.5 -0.5 A Pulsed Drain Current(Note 4) IDM 1.0 -1.0 A Ta=25oC Power Dissipation Derate above 25oC Operating Junction and Storage Temperature Range 300 mW 2.4 mW/ oC TJ,TSTG -55~150 oC RθJA 417 oC/W PD Typical Thermal Resistance - Junction to Ambient(Note 3) August 10,2022 PJX8601-REV.01 Page 1 PJX8601 N-Channel Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250uA 20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID= 250uA 0.3 0.64 0.9 V VGS= 4.5V, ID= 500mA - 0.31 0.4 VGS= 2.5V, ID= 200mA - 0.36 0.65 VGS= 1.8V, ID= 100mA - 0.43 0.8 VGS= 1.5V, ID= 50mA - 0.51 1.2 VGS= 1.2V, ID= 20mA - 0.71 3.0 Drain-Source On-State Resistance RDS(on) Ω Zero Gate Voltage Drain Current IDSS VDS= 16V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=+8V, VDS=0V - +0.5 +10 uA - 1.4 - - 0.22 - - 0.21 - - 67 - - 19 - - 6 - - 2.8 - - 20 - - 23 - - 23 - - - 500 mA - 0.87 1.3 V Dynamic(Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=10V, ID=500mA, VGS=4.5V VDS=10V, VGS=0V, f=1.0MHZ VDD=10V, ID=150mA, VGS=4V, RG=10Ω(Note 1,2) nC pF ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage August 10,2022 IS VSD --IS= 500mA, VGS=0V PJX8601-REV.01 Page 2 PJX8601 P-Channel Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250uA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.3 -0.6 -1.0 V VGS=-4.5V,ID=-500mA - 0.9 1.2 VGS=-2.5V,ID=-200mA - 1.07 1.5 VGS=-1.8V,ID=-100mA - 1.25 2.2 VGS=-1.5V,ID=-40mA - 1.42 3.6 VGS=-1.2V,ID=-10mA - 1.7 6.0 Drain-Source On-State Resistance RDS(on) Ω Zero Gate Voltage Drain Current IDSS VDS=-16V,VGS=0V - - -1 uA Gate-Source Leakage Current IGSS VGS=+8V,VDS=0V - +2 +10 uA - 1.4 - - 0.19 - - 0.2 - - 38 - - 15 - - 9 - - 7.2 - - 21 - - 85 - - 116 - - - -500 mA - -0.9 -1.3 V Dynamic(Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=-10V, ID=-500mA, VGS=-4.5V VDS=-10V, VGS=0V, f=1.0MHZ VDD=-10V, ID=-500mA, VGS=-4.5V, RG=6Ω(Note 1,2) nC pF ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=-500mA, VGS=0V NOTES : 1. Pulse width