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PJX8807_R1_00001

PJX8807_R1_00001

  • 厂商:

    PANJIT(强茂)

  • 封装:

    SOT563,SOT666

  • 描述:

    MOSFET - 阵列 20V 500mA(Ta) 300mW(Ta) 表面贴装型 SOT-563

  • 数据手册
  • 价格&库存
PJX8807_R1_00001 数据手册
PJX8807 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current SOT-563 -500mA Unit : inch(mm) Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Load switch, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0026 grams  Marking : X07 Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS +10 V Continuous Drain Current ID -500 mA Pulsed Drain Current IDM -1000 mA 300 mW 2.4 mW/ oC TJ,TSTG -55~150 oC RθJA 417 oC/W Ta=25oC Power Dissipation Derate above 25oC Operating Junction and Storage Temperature Range PD Typical Thermal Resistance - Junction to Ambient(Note 3) August 10,2022 PJX8807-REV.03 Page 1 PJX8807 Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.3 -0.59 -1.0 V VGS=-4.5V, ID=-500mA - 0.9 1.2 VGS=-2.5V, ID=-200mA - 1.07 1.5 VGS=-1.8V, ID=-100mA - 1.25 2.2 VGS=-1.5V, ID=-40mA - 1.42 3.6 VGS=-1.2V, ID=-10mA - 1.7 6.0 Drain-Source On-State Resistance RDS(on) Ω Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V - - -1 uA Gate-Source Leakage Current IGSS VGS=+8V, VDS=0V - +2 +10 uA - 1.4 - - 0.19 - - 0.2 - - 38 - - 15 - - 9 - - 7.2 - - 21 - - 85 - - 116 - - - -500 mA - -0.93 -1.3 V Dynamic(Note 5) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=-10V, ID=-500mA, VGS=-4.5V(Note 1,2) VDS=-10V, VGS=0V, f=1.0MHZ VDD=-10V, ID=-500mA, VGS=-4.5V, RG=6Ω(Note 1,2) nC pF ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=-500mA, VGS=0V NOTES : 1. Pulse width
PJX8807_R1_00001 价格&库存

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PJX8807_R1_00001

库存:8000

PJX8807_R1_00001
  •  国内价格 香港价格
  • 4000+0.914344000+0.11437
  • 8000+0.833168000+0.10421
  • 12000+0.7917812000+0.09904
  • 20000+0.7452820000+0.09322
  • 28000+0.7177428000+0.08978
  • 40000+0.6909740000+0.08643
  • 100000+0.65077100000+0.08140

库存:8000